Semiconductor device and method of manufacturing semiconductor device

• US 20070176197A1
• Filed: 01/29/2007
• Published: 08/02/2007
• Est. Priority Date: 01/30/2006
• Status: Abandoned Application

• Current Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Original Assignee: Shinko Electric Industries Company Limited (Fujitsu Limited)
• Inventors: Shiraishi, Akinori, Sunohara, Masahiro, Murayama, Kei, Koizumi, Naoyuki, Higashi, Mitsutoshi, Taguchi, Yuichi, Sakaguchi, Hideaki
• Application Number:
  US11/699,034
• Publication Number:
  US 20070176197A1
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: F21K 9/00 Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

A semiconductor device 10 has such a structure that a plurality of through electrodes 30 is formed on a substrate 20 and each of terminals of light emitting devices (LEDs) 40 is electrically connected to each of the through electrodes 30 via a bump 50 on a lower surface side. In the semiconductor device 10, moreover, a partition wall 80 for surrounding a mounting region of each of the light emitting devices 40 is formed on the substrate 20. The partition wall 80 is formed by laminating a metal film (Cu) using a thin film forming method such as a plating method. Furthermore, the partition wall 80 is formed to be opposed close to each of side surfaces of the light emitting devices 40 and is provided to surround each of the light emitting devices 40.

Claims

1. A semiconductor device comprising:

a substrate;

a plurality of light emitting devices mounted on the substrate; and

a partition wall for intercepting a light between the light emitting devices, said partition being provided in the vicinity of a mounting region in which the light emitting devices are mounted.

2. The semiconductor device according to claim 1, wherein the partition wall is formed perpendicularly on the substrate so as to be opposed close to a side surface of the light emitting device.

3. The semiconductor device according to claim 1, wherein the light emitting device is an LED formed by using sapphire as a substrate.

4. A method of manufacturing a semiconductor device which mounts a plurality of light emitting devices on a substrate, comprising the steps of:

forming through electrodes in a plurality of portions in which the light emitting devices are disposed on the substrate;

forming a seed layer on a surface of the substrate so as to be connected to the through electrodes;

patterning a resist in a mounting region in which the light emitting devices are mounted;

forming a partition wall for intercepting a light between the light emitting devices around the mounting region;

removing the resist from the substrate; and

disposing the light emitting devices in the mounting region.

5. The method of manufacturing a semiconductor device according to claim 4, wherein the partition wall has a metal film laminated by a thin film forming method in the vicinity of a side surface of the light emitting device.

6. The method of manufacturing a semiconductor device according to claim 4, wherein the partition wall has such a structure that a metal layer formed by plating is laminated to surround a side surface of the light emitting device.

7. The method of manufacturing a semiconductor device according to claim 4, wherein the light emitting device is an LED formed by using sapphire as a substrate.

8. A method of manufacturing a semiconductor device which mounts a plurality of light emitting devices on a substrate, comprising the steps of:

forming a plurality of concave portions in a region on a surface of the substrate in which the light emitting devices are to be mounted, thereby leaving a partition wall between the concave portions;

forming through electrodes in bottom parts of the concave portions;

mounting the light emitting devices in the concave portions; and

connecting terminals of the light emitting devices to the through electrode.

9. The method of manufacturing a semiconductor device according to claim 8, wherein the concave portion is formed to take a corresponding shape to a contour shape of the light emitting device.

10. The method of manufacturing a semiconductor device according to claim 8, wherein the concave portion is formed by etching and an internal wall of the concave portion opposed close to a side surface of the light emitting device is formed as a partition wall.

11. The method of manufacturing a semiconductor device according to claim 8, wherein the light emitting device is an LED formed by using sapphire as a substrate.