INTEGRATED CAPACITOR STRUCTURE

• US 20070181924A1
• Filed: 10/03/2006
• Published: 08/09/2007
• Est. Priority Date: 10/04/2005
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Draxelmayr, Dieter, Baumgartner, Peter, Riess, Philipp, Benetik, Thomas
• Granted Patent: US 7,485,945 B2
• Time in Patent Office: Days
• US Class Current: 257/296
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 27/0805 Capacitors only
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor component includes an integrated capacitor structure embodied at least partly in an electrically conductive plane and which is patterned such that a multiplicity of strip elements are present. A first group of strip elements constitutes a first electrode of the capacitor structure and a second group of strip elements constitutes a second electrode of the capacitor structure. The first strip elements together with the second strip elements being at least partly interlinked in one another, and at least one strip element may have a non-constant width along its length.

Claims

1. A semiconductor component comprising:

an integrated capacitor structure including at least one a plane including a plurality of strip elements, a first group of the strip elements constituting a first electrode of the capacitor structure and a second group of strip elements constituting a second electrode of the capacitor structure, wherein the first strip elements together with the second strip elements are least partly interlinked with one another, and wherein at least one strip element has a non-constant width along its length.

2. A semiconductor component according to claim 1, wherein at least one strip element has a width diminishing toward a free end thereof.

3. A semiconductor component according to claim 1, wherein at least one strip element is tapered as acute angle triangles in an x-y plane.

4. A semiconductor component according to claim 1, wherein at least one strip element is shaped from at least two parallelepipedal elements having different cross-sections abutting each other.

5. A semiconductor component according to claim 1, wherein the strip elements are embodied in one metallization plane of the semiconductor component.

6. A semiconductor component according to claim 1, wherein the strip elements are embodied in at least two metallization planes of the semiconductor component.

7. A semiconductor component according to claim 1, wherein the strip elements are embodied from polysilicon in at least one plane of the semiconductor component.

8. A semiconductor component according to claim 1, wherein the strip elements are embodied from polysilicon in a plurality of planes of the semiconductor component.

9. A semiconductor component according to claim 1, wherein the strip elements are embodied by patterned doping of a semiconductor substrate, the strip elements being electrically insulated from one another.

10. A semiconductor component according to claim 1, wherein the strip elements are embodied by patterned doping of a semiconductor well, the strip elements being electrically insulated from one another.

11. A semiconductor component according to claim 1, wherein the first group of strip elements is embodied by patterned doping of a semiconductor substrate in a first doping type and the second group of strip elements is embodied by patterned doping of a semiconductor substrate in a second doping type.

12. A semiconductor component according to claim 1, wherein the first group of strip elements is embodied by patterned doping of a semiconductor well in a first doping type and the second group of strip elements is embodied by patterned doping of a semiconductor well in a second doping type.

13. A semiconductor component according to claim 9, wherein the strip elements are embodied in a plurality of substrate planes shaped by way of patterned doping.

14. A semiconductor component according to claim 1, wherein the strip elements are embodied both in at least one respective metallization plane and in at least one respective substrate plane shaped by way of patterned doping.

15. A semiconductor component comprising:

an integrated capacitor structure including at least two planes on which a plurality of strip elements is formed, a first group of the strip elements constituting a first electrode of the capacitor structure and a second group of the strip elements constituting a second electrode of the capacitor structure, wherein the first strip elements together with the second strip elements are at least partly interlinked to one another, and wherein at least two of the strip elements from different planes are conductively connected to one another and partly overlapping and have different lengths.

16. A capacitor, comprising:

a substrate; and

at least one planar structure above the substrate, including first and second groups of longitudinally extending, alternatingly arranged, conductive strip elements, and first and second laterally extending connecting elements, wherein the first and second connecting elements are conductively connected respectively to the first and second groups of strip elements to provide a pair of capacitor plates, and a width of at least one of the first and second groups of strip elements decreases along at least one longitudinal segment thereof between the connecting element and a longitudinal end thereof.

17. The capacitor of claim 16, including at least two planar structures, and also comprising:

a plurality of vertically extending vias conductively connecting the first group of strip elements of a first planar structure to a first group of strip elements of a second planar structure, and conductively connecting a second group of strip elements of a first planar structure to a second group of strip elements of a second planar structure.

18. The capacitor of claim 16, wherein at least one strip element has a width diminishing toward a free end thereof.

19. The capacitor of claim 16, wherein the wherein at least one strip element is shaped from at least two parallelepipedal elements having different cross-sections abutting each other.

20. The capacitor of claim 16, wherein the strip elements are embodied by patterned doping of a semiconductor substrate, the strip elements being electrically insulated from one another.