Intercalated superlattice compositions and related methods for modulating dielectric property

• US 20070181961A1
• Filed: 12/20/2006
• Published: 08/09/2007
• Est. Priority Date: 12/20/2005
• Status: Active Grant

• Current Assignee: Northwestern University
• Original Assignee: Northwestern University
• Inventors: Facchetti, Antonio, Marks, Tobin
• Granted Patent: US 7,678,463 B2
• Time in Patent Office: Days
• US Class Current: 257/411
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: H10K 10/23 Schottky diodes
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/471 the gate dielectric comprising only organic materials
• CPC Class Codes: H10K 10/474 the gate dielectric comprising a multilayered structure
• CPC Class Codes: H10K 10/476 comprising at least one organic layer and at least one inorganic layer
• CPC Class Codes: Y10T 428/31536 Including interfacial reaction product of adjacent layers
• CPC Class Codes: Y10T 428/31663 As siloxane, silicone or silane

Abstract

Compositions, methods of using inorganic moieties for dielectric modulation, and related device structures.

Claims

1. A dielectric composition comprising a multi-layered composition, the multi-layered composition comprising periodically alternating layers, the alternating layers comprising (a) one or more layers comprising a silyl or siloxane moiety, (b) one or more layers comprising a π

-polarizable moiety, and (c) one or more layers comprising an inorganic moiety comprising one or more main group metals and/or transition metals selected from Zr, Ti, Hf, and Ta.

2. The dielectric composition of claim 1, wherein at least some of the alternating layers are coupled to an adjacent layer by a coupling layer comprising a siloxane matrix.

3. The dielectric composition of claim 1, wherein the silyl moiety has the formula selected from —

Si(CH₂)_nSi—

, —

Si(CHF)_nSi—

, and —

Si(CF₂)_nSi—

, wherein n is 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10.

4. The dielectric composition of claim 1, wherein the n-polarizable moiety comprises a stilbazolium group.

5. The dielectric composition of claim 1 comprising self-assembled monolayers of the silyl moiety.

6. The dielectric composition of claim 1 comprising self-assembled monolayers of the n-polarizable moiety.

7. The dielectric composition of claim 2, wherein at least some of the alternating layers are coupled to one another or the siloxane matrix via a condensation reaction.

8. The dielectric composition of claim 2, wherein at least some of the alternating layers are coupled to one another or the siloxane matrix via chemisorption.

9. A method of using an inorganic component to affect a property of a dielectric material, said method comprising:

providing a dielectric composition comprising a multilayer composition, the multilayer composition comprising periodically alternating layers, the alternating layers comprising (a) one or more layers comprising a silyl or siloxane moiety, and (b) one or more layers comprising a π

-polarizable moiety, wherein at least some of the alternating layers are coupled to an adjacent layer by a coupling layer comprising a siloxane matrix; and

intercalating within the multilayer composition one or more inorganic layers, each of the inorganic layers comprising one or more main group metals and/or transition metals selected from Ga, In, Ti, Zr, Hf, and Ta.

10. The method of claim 9 wherein the number of inorganic layers intercalated within the multilayer composition is sufficient to increase the capacitance of the dielectric material.

11. A thin film transistor device comprising:

a substrate;

a dielectric material deposited on the substrate; and

a semiconductor material deposited on the dielectric material;

wherein the dielectric material comprises a multilayer composition, the multilayer composition comprising periodicially alternating layers, the alternating layers comprising (a) one or more layers comprising a silyl or siloxane moiety, (b) one or more layers comprising a π

-polarizable moiety, and (c) one or more layers comprising an inorganic moiety comprising one or more main group metals and/or transition metals.

12. The device of claim 11, wherein at least some of the alternating layers of the dielectric material are coupled to an adjacent layer by a coupling layer comprising a siloxane matrix.

13. The device of claim 11, wherein the silyl moiety has the formula selected from —

Si(CH₂)_nSi—

, —

Si(CHF)_nSi—

, and —

Si(CF₂)_nSi—

, wherein n is 1, 2, 3, 4, 5, 6, 7, 8, 9 or 10.

14. The device of claim 11, wherein the n-polarizable moiety comprises a stilbazolium group.

15. The device of claim 11, wherein the one or more main group metals and/or transition metals are independently selected from In, Ga, Zr, Ti, Hf, and Ta.

16. The device of claim 11, wherein the dielectric material comprises self-assembled monolayers of the silyl moiety.

17. The device of claim 11, wherein the dielectric material comprises self-assembled monolayers of the π

-polarizable moiety.

18. The device of claim 12, wherein at least some of the alternating layers of the dielectric material are coupled to one another or the siloxane matrix via a condensation reaction.

19. The device of claim 12, wherein at least some of the alternating layers of the 30 dielectric material are coupled to one another or the siloxane matrix via chemisorption.

20. The device of claim 11, wherein both the substrate and the semiconductor material are transparent.