Light emitting apparatus including resin banks and electronic device having same

• US 20070236139A1
• Filed: 06/07/2007
• Published: 10/11/2007
• Est. Priority Date: 05/10/2002
• Status: Active Grant

• Current Assignee: Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Kobayashi, Hidekazu, Miyashita, Satoru
• Granted Patent: US 7,710,027 B2
• Time in Patent Office: Days
• US Class Current: 313/504
• CPC Class Codes: H10K 50/85 Arrangements for extracting light from the devices
• CPC Class Codes: H10K 50/86 Arrangements for improving contrast, e.g. preventing reflection of ambient light
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/8791 Arrangements for improving contrast, e.g. preventing reflection of ambient light

Abstract

The invention provides an organic EL apparatus including a substrate, a pair of electrodes formed on the substrate, and a light emitting layer disposed between the electrodes is provided in order to implement a light emitting apparatus and an electronic device which decrease reflections in a display of the organic EL apparatus, and to enhance display quality. The substrate includes a transparent substrate, the pair of the electrodes is an anode disposed on the light emitting layer at the substrate side, and a cathode disposed on the light emitting layer at an opposite side of the substrate. A semi-reflection film is disposed near the anode. The semi-reflection film transmits a part of external light incident on the organic EL apparatus from the substrate, and reflects a part of the light other than the light transmitted.

Claims

1. A light emitting apparatus, comprising:

a substrate;

a semi-reflection film that reflects at least a part of light;

an organic electroluminescence element including;

a first electrode;

a second electrode having a light reflection property; and

a light emitting layer sandwiched between the first and second electrodes,

the first electrode being disposed between the light emitting layer and the semi-reflection film; and

a thickness of the light emitting layer being set so that a first reflection light and a second reflection light interfere and attenuate each other when an external light is incident on the light emitting apparatus, the first reflection light being incident on the light emitting apparatus and reflected by the semi-reflection film, and the second reflection light being reflected by the second electrode.

3. A light emitting apparatus as claimed in claim 1,

a reflectance of the semi-reflection film being set such that an intensity of the first reflection light is approximately the same as that of the second reflection light.

4. A light emitting apparatus as claimed in claim 1,

the semi-reflection film transmitting about 50 percent of the light incident on the semi-reflection film, and reflecting about 50 percent of the light incident on the semi-reflection film.

5. A light emitting apparatus as claimed in claim 1,

the semi-reflection film being formed near the first electrode.

6. A light emitting apparatus as claimed in claim 1,

the first electrode capable of reflecting at least a part of light.

7. A light emitting apparatus as claimed in claim 1, further comprising

a plurality of scanning lines;

a plurality of data lines;

switching elements, each of the switching elements connected to one of the scanning lines and one of the data lines; and

pixel electrodes, each of the pixel electrodes connected to one of the switching elements.

8. An electronic device, comprising the light emitting apparatus as claimed in claim 1.

2. A light emitting apparatus, comprising:

a substrate;

a semi-reflection film that reflects at least a part of light;

an organic electroluminescence element including;

a first electrode;

a second electrode having a light reflection property; and

a light emitting layer sandwiched between the first and second electrodes,

the first electrode being disposed between the light emitting layer and the semi-reflection film; and

a thickness of the light emitting layer being set so that a first reflection light and a second reflection light interfere and attenuate each other when a light with a wave length of 520 nm is incident on the light emitting apparatus, the first reflection light being incident on the light emitting apparatus and reflected by the semi-reflection film; and

the second reflection light being reflected by the second electrode.

9. An electronic device, comprising the light emitting apparatus as claimed in claim 2.