REACTIVE SPUTTERING ZINC OXIDE TRANSPARENT CONDUCTIVE OXIDES ONTO LARGE AREA SUBSTRATES

• US 20070261951A1
• Filed: 04/06/2007
• Published: 11/15/2007
• Est. Priority Date: 04/06/2006
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Ye, Yan, Lau, Allen, Inagawa, Makoto, Hosokawa, Akihiro, Kadam, Ankur, Stimson, Bradley, Li, Yanping
• Application Number:
  US11/697,476
• Publication Number:
  US 20070261951A1
• Time in Patent Office: Days
• US Class Current: 204/192.100
• CPC Class Codes: C23C 14/0063 characterised by means for introducing or removing gases
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: C23C 14/564 Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/34 operating with cathodic sputtering H01J37/36 takes precedence ; methods of cathodic sputtering C23C14/34
• CPC Class Codes: H01J 37/3438 Electrodes other than cathode

Abstract

The present invention generally comprises one or more cooled anodes shadowing one or more gas introduction tubes where both the cooled anodes and the gas introduction tubes span a processing space defined between one or more sputtering targets and one or more substrates within a sputtering chamber. The gas introduction tubes may have gas outlets that direct the gas introduced away from the one or more substrates. The gas introduction tubes may introduce reactive gas, such as oxygen, into the sputtering chamber for depositing TCO films by reactive sputtering. During a multiple step sputtering process, the gas flows (i.e., the amount of gas and the type of gas), the spacing between the target and the substrate, and the DC power may be changed to achieve a desired result.

Claims

1. A physical vapor deposition apparatus, comprising:

one or more sputtering targets;

a substrate support;

one or more anodes disposed between the one or more sputtering targets and the substrate support; and

one or more gas distribution tubes coupled with the one or more anodes and one or more gas sources.

2. The apparatus of claim 1, wherein the one or more gas sources comprises an oxygen source.

3. The apparatus of claim 1, wherein the one or more anodes each comprise a body defining a flow path through which a cooling fluid flows.

4. The apparatus of claim 1, wherein the one or more gas distribution tubes are disposed between the one or more anodes and the substrate support.

5. The apparatus of claim 1, wherein the one or more anodes each have a first diameter, and the one or more gas distribution tubes each have a second diameter, wherein the first diameter is greater than the second diameter.

6. The apparatus of claim 1, wherein the one or more gas distribution tubes and the one or more anodes are coupled together with a clamp.

7. The apparatus of claim 6, wherein the clamp comprises a material which is thermally conductive, electrically conductive, or both.

8. The apparatus of claim 1, wherein the one or more gas distribution tubes and the one or more anodes are coupled together by welding.

9. The apparatus of claim 1, wherein the one or more gas distribution tubes comprise one or more openings directed away from the substrate support.

10. The apparatus of claim 9, wherein the one or more gas distribution tubes each have a first diameter and the one or more openings each have a second diameter, and wherein the first diameter is about ten times greater than the second diameter.

11. A physical vapor deposition apparatus, comprising:

a chamber body;

one or more sputtering targets disposed within the chamber body;

a substrate support disposed within the chamber body; and

one or more tubes disposed within the chamber body between the one or more sputtering targets and the substrate support, the one or more tubes comprising an anode and one or more gas outlets.

12. The apparatus of claim 11, wherein the anode comprises a cooling channel.

13. The apparatus of claim 11, wherein the one or more gas outlets are directed away from the substrate support.

14. The apparatus of claim 11, wherein the one or more tubes comprise a hollow anode portion and a gas distribution portion having the one or more gas outlets, and wherein the first hollow anode portion and the first gas distribution portion are a unitary piece of material.

15. The apparatus of claim 14, wherein the first gas distribution portion is disposed between the anode portion and the substrate support.

16. The apparatus of claim 14, wherein the first gas distribution portion is coupled with one or more gas sources.

17. The apparatus of claim 16, wherein the one or more gas sources is an oxygen source.

18. A physical vapor deposition method, comprising:

positioning at least one tube assembly in a processing space between one or more sputtering targets and a susceptor, the tube assembly comprising an anode with a cooling channel therein and a gas distribution tube;

cooling the at least one tube assembly with a cooling fluid flowing within the anode;

flowing processing gas through the gas distribution tube; and

sputtering material from the one or more sputtering targets onto a substrate.

19. The method of claim 18, wherein the one or more sputtering targets comprise zinc.

20. The method of claim 18, wherein the sputtering comprises reactive sputtering.

21. The method of claim 18, wherein the processing gas comprises inert gases, oxygen containing gases, non-oxygen containing additives, and combinations thereof.

22. The method of claim 18, wherein a transparent conductive oxide is sputter deposited onto the substrate.

23. The method of claim 18, further comprising adjusting one or more parameter during sputtering selected from the group consisting of processing gas flow rate, power supplied to the one or more sputtering targets, spacing between the substrate and one or more sputtering targets, and substrate temperature.

24. The method of claim 18, wherein the sputtering occurs at about 25 degrees Celsius.