HARD LAMINATED FILM, METHOD OF MANUFACTURING THE SAME AND FILM-FORMING DEVICE
First Claim
1. A method of forming a hard laminated film comprising a layer A and a layer B of specific compositions deposited alternately, wherein the crystal structure of layer A differs from the crystal structure of layer B, the thickness of layer A per layer is two or more times that of layer B per layer, the thickness of layer B per layer is 0.5 nm or more, and the thickness of layer A per layer is 200 nm or less, wherein an arc vaporization source and a sputter vaporization source are simultaneously operated in a film-forming atmosphere containing a reactive gas using a film-forming device comprising one or more of each of an arc vaporization source and sputter vaporization source also having a magnetic field applying function in the same vacuum container so that the components of said layer A are vaporized by the arc vaporization source and the components of said layer B are vaporized by the sputter vaporization source, respectively, and a substrate is moved relative to said vaporization sources so that said layer A and said layer B are deposited alternately on the substrate.
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Abstract
A hard laminated film wherein a layer A and a layer B having specific compositions are deposited alternately so that the compositions of layer A and layer B are different. The thickness of layer A per layer is twice or more the thickness of layer B per layer, the thickness of layer B per layer is 0.5 nm or more, and the thickness of layer A per layer is 200 nm or less. Layer A has a cubic rock-salt crystal structure such as that of Ti, Cr, Al, V nitride, carbonitride or carbide, and layer B is a hard film having a crystal structure other than cubic such as that of BN, BCN, SiN, SiC, SiCN, B—C, Cu, CuN, CuCN or metallic Cu. Alternatively, layer A has a chemical composition satisfying the following formula (1), and layer B has a chemical composition satisfying the following formula (2).
Cr(BaCbN1-a-b-cOc) Layer A
0≦a≦0.15, 0≦b≦0.3, 0≦c≦0.1, 0.2≦e≦1.1 (1)
B1-s-tCsNt Layer B
0≦s 0.25, (1−s−t)/t≦1.5 (2)
Alternatively, Layer A has a specific atomic ratio composition of (Ti1-x-yAlxMy)(BaCbN1-a-b-cOc), and Layer B has one or more specific atomic ratio compositions selected from among the compositions B1-x-yCxNy, Si1-x-yCxNy, C1-xNx, Cu1-y(CxN1-x)y. Alternatively, Layer A has one of the following Compositional Formulae 1 or 2. Formula 1: (Ti1-x-yAlxMy), (BaCbN1-a-b-cOc), Formula 2: (Cr1-αXα)(BaCbN1-a-b-cOc)e (X is one or more metal elements selected from among Ti, Zr, Hf, V, Nb, Ta, Mo, W, Al, Si. Layer B has the following compositional formula 3. Formula 3: M(BaCbN1-a-b-cOc). M is one or more metal elements selected from among W, Mo, V, Nb.
37 Citations
9 Claims
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1. A method of forming a hard laminated film comprising a layer A and a layer B of specific compositions deposited alternately, wherein the crystal structure of layer A differs from the crystal structure of layer B, the thickness of layer A per layer is two or more times that of layer B per layer, the thickness of layer B per layer is 0.5 nm or more, and the thickness of layer A per layer is 200 nm or less,
wherein an arc vaporization source and a sputter vaporization source are simultaneously operated in a film-forming atmosphere containing a reactive gas using a film-forming device comprising one or more of each of an arc vaporization source and sputter vaporization source also having a magnetic field applying function in the same vacuum container so that the components of said layer A are vaporized by the arc vaporization source and the components of said layer B are vaporized by the sputter vaporization source, respectively, and a substrate is moved relative to said vaporization sources so that said layer A and said layer B are deposited alternately on the substrate.
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4. A film-forming device comprising:
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a film-forming chamber;
an arc vaporization source disposed in said film-forming chamber which has a magnetic field applying mechanism;
a sputter vaporization source disposed in said film-forming chamber which has a magnetic field applying mechanism; and
means for moving the substrate on which a film is to be formed between said arc vaporization source and said sputter vaporization source;
wherein, said magnetic field applying mechanism is so arranged that the magnetic force lines of said vaporization sources which are adjacent to each other, are interconnected during film-forming. - View Dependent Claims (5, 6, 7, 8, 9)
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Specification