Capacitive Pressure Sensor with Sealed Reference Chamber

• US 20070283763A1
• Filed: 05/03/2007
• Published: 12/13/2007
• Est. Priority Date: 10/18/2004
• Status: Active Grant

• Current Assignee: Precision Mechatronics Pty Ltd
• Original Assignee: Silverbrook Research Pty Limited
• Inventors: Silverbrook, Kia, Mallinson, Samuel
• Granted Patent: US 7,461,558 B2
• Time in Patent Office: Days
• US Class Current: 73/724
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm

Abstract

A capacitive pressure sensor includes a substrate assembly. The substrate assembly includes a conductive layer and defines a plurality of channels terminating in closed ends. A conductive membrane is mounted to the substrate assembly so that a sealed reference chamber including the channels is defined by the conductive membrane and the substrate assembly. A cap is mounted relative to the substrate assembly and defines one or more apertures so that an antechamber is defined by the cap and the conductive membrane. Differential pressure between the reference chamber and antechamber can cause deflection of the conductive membrane which, in turn, varies the capacitance between the conductive membrane and conductive layer.

Claims

1. A capacitive pressure sensor comprising:

a substrate assembly having a conductive layer and defining a plurality of channels terminating in closed ends;

a conductive membrane mounted to the substrate assembly so that sealed reference chambers are defined by respective channels, the conductive membrane and the substrate assembly; and

a cap arranged on the substrate assembly and defining one or more apertures so that an antechamber is defined between the cap and the conductive membrane, such that differential pressure between the reference chamber and antechamber can cause deflection of the conductive membrane which, in turn, varies the capacitance between the conductive membrane and the conductive layer.

2. A pressure sensor as claimed in claim 1, wherein the substrate assembly comprises a silicon substrate defining through-channels and a termination layer mounted to the silicon substrate to terminate the channels in closed ends.

3. A pressure sensor as claimed in claim 1, wherein the substrate assembly comprises:

a silicon substrate;

a CMOS layer deposited on the substrate.

the conductive layer deposited on the CMOS layer; and

a passivation layer deposited on the conductive layer.

4. A pressure sensor as claimed in claim 1, wherein the conductive membrane defines:

a foot which is located between the substrate assembly and cap; and

a leg which extends away from the substrate assembly and terminates in a substantially planar deflectable portion.

5. A capacitive pressure sensor comprising:

a substrate assembly having a conductive layer and defining a plurality of channels terminating in closed ends;

a conductive membrane mounted to the substrate assembly so that sealed reference chambers are defined by respective channels, the conductive membrane and the substrate assembly, such that differential pressure between the reference chamber and antechamber can cause deflection of the conductive membrane which, in turn, varies the capacitance between the conductive membrane and the conductive layer;

a cap arranged on the substrate assembly and defining one or more apertures so that an antechamber is defined between the cap and the conductive membrane; and

a cover configured to be engaged with the cap to define a main chamber in fluid communication with the antechamber.

6. A pressure sensor as claimed in claim 5, wherein the cover defines a vent so that the main chamber is unsealed.

7. A pressure sensor as claimed in claim 6, wherein the cap defines a circular wall to which a circular internal wall of the cover can be snugly fitted.