Dry etching method for oxide semiconductor film

• US 20070287296A1
• Filed: 05/22/2007
• Published: 12/13/2007
• Est. Priority Date: 06/13/2006
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Chang, Chienliu
• Granted Patent: US 8,034,248 B2
• Time in Patent Office: Days
• US Class Current: 438/706
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 31/1884 Manufacture of transparent electrodes, e.g. TCO, ITO
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

Provided is a dry etching method for an oxide semiconductor film made of In—Ga—Zn—O, in which an etching gas containing a hydrocarbon is used in a dry etching process for the oxide semiconductor film made of In—Ga—Zn—O formed on a substrate.

Claims

1. A dry etching method for an oxide semiconductor film containing at least In, Ga, and Zn, comprising etching in a gas atmosphere containing a hydrocarbon.

2. The dry etching method for an oxide semiconductor film according to claim 1, wherein the etching is performed with a reaction pressure in a range of 0.6 Pa or more to 3.5 Pa or less.

3. The dry etching method for an oxide semiconductor film according to claim 1, wherein the etching is performed with an RF power density in a range of 0.1 W/cm² or more to 20 W/cm² or less.

4. The dry etching method for an oxide semiconductor film according to claim 1, wherein the oxide semiconductor film comprises a transparent amorphous oxide film having an electron carrier concentration of less than 10¹⁸/cm³.

5. The dry etching method for an oxide semiconductor film according to claim 1, wherein the etching is performed with a surface temperature of the oxide semiconductor film in a range of −

20°

C. or more to 200°

C. or less.

6. The dry etching method for an oxide semiconductor film according to claim 1, wherein the etching is performed using a gas comprising a mixture gas of a hydrocarbon and Ar.

7. The dry etching method for an oxide semiconductor film according to claim 6, wherein a ratio of the Ar in the mixture gas of a hydrocarbon and Ar is in a range of 5 mol % or more to 80 mol % or less.