BOND WIRELESS POWER MODULE WIHT DOUBLE-SIDED SINGLE DEVICE COOLING AND IMMERSION BATH COOLING

• US 20070290311A1
• Filed: 05/22/2007
• Published: 12/20/2007
• Est. Priority Date: 05/24/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Hauenstein, Henning
• Granted Patent: US 8,680,666 B2
• Time in Patent Office: Days
• US Class Current: 257/685
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/73153 Bump and layer connectors
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/112 Mixed assemblies
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01025 Manganese [Mn]
• CPC Class Codes: H01L 2924/01027 Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/0103 Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01077 Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/01327 Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13062 : Junction field-effect transistor [JFET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30107 : Inductance

Abstract

A wire bond free power module assembly consists of a plurality of individual thin packages each consisting of two DBC wafers which sandwich one or more semiconductor die. The die electrodes and terminals extend through one insulation covered end of the wafer sandwich and the outer sides of the sandwiches are the outer copper plates of the DBC wafers which are in good thermal communication with the semiconductor die but are electrically insulated therefrom. The plural packages may be connected in parallel by lead frames on the terminals and the packages are stacked with a space between them to expose both sides of all packages to a cooling medium, either the fingers of a conductive comb or a fluid heat exchange medium.

Claims

1. A power module assembly for a plurality of semiconductor packages with improved cooling capability;

each of said plurality of semiconductor packages comprising a thin generally rectangular body having a top and bottom metallic side surfaces and first and second end surfaces perpendicular to and joining said side surfaces;

at least one central semiconductor die disposed within the interior of said package and having a plurality of terminals extending from at least said first end surface of said package, said at least one die having first and second opposite surfaces thermally connected to said top and bottom metallic side surface and electrically insulated therefrom, and an insulation housing enclosing at least a portion of the periphery of said package and insulating said plurality of terminals from said top and bottom metallic side surfaces;

a package support connected to and supporting a plurality of said packages in spaced parallel relationship with said top and bottom metallic side surfaces of adjacent ones of said packages being spaced by a given space and are coextensive with respect to one another and are exposed for heat transfer to a cooling medium.

2. The power module assembly of claim 1, wherein said package support comprises a thermally conductive comb having rectangular comb fingers disposed in each given space between adjacent ones of said packages and in thermal contact with said side surfaces of the packages defining said each of said spaces.

3. The power module assembly of claim 1, wherein said package support comprises a conductive plate receiving and fastened to the ends of said packages adjacent the terminals of said at least one semiconductor device in each of said packages, whereby a cooling fluid can circulate through said given space between adjacent packages to cool each of said packages from each of its said sides.

4. The power module assembly of claim 2, wherein said thermally conductive comb comprises a plurality of identical plates which are clamped together to define said comb.

5. The power module assembly of claim 2, wherein said terminals of each of said packages extend beyond the ends of the fingers of said comb.

6. The power module assembly of claim 2, wherein said terminals of each of said packages extend beyond the side edges the fingers of said comb.

7. The power module assembly of claim 1, wherein each of said modules comprises a copack of at least two semiconductor die.

8. The power module assembly of claim 1, wherein each said at least one semiconductor die is a MOSgated device.

9. The power module assembly of claim 1, which further includes a lead frame assembly disposed atop said terminals of each of said packages and electrically connecting like terminals of each of said packages to one another.

10. The power module assembly of claim 3, wherein each of said modules comprises a copack of at least two semiconductor die.

11. The power module assembly of claim 3, wherein each said at least one semiconductor die is a MOSgated device.

12. The power module assembly of claim 3, which further includes a lead frame assembly disposed atop said terminals of each of said packages and electrically connecting like terminals of each of said packages to one another.

13. The power module assembly of claim 8, which further includes a lead frame assembly disposed atop said terminals of each of said packages and electrically connecting like terminals of each of said packages to one another.

14. The power module assembly of claim 13, which includes at least 4 packages having three terminals each, the terminals of each of said packages electrically connected in parallel by said lead frame assembly.

15. The power module of claim 3, which further includes a coolant container having an open top;

said conductive plate fixed to and sealed across said open top;

the bodies of each of said packages being immersed in the coolant of said coolant container;

said terminals being disposed exteriorly of said coolant container.

16. The power assembly of claim 1, wherein each of said packages comprise first and second DBC wafers which form a sandwich with said at least one semiconductor die between them;

said top and bottom metallic side surfaces of each of said packages comprising copper plates of said first and second DBC wafers respectively.

17. The power module assembly of claim 1, wherein each of said packages have a thickness between their said top and bottom metallic side surfaces of less than about 5 mm.

18. The power module assembly of claim 1, wherein each of said top and bottom said surfaces have a length and width each greater than about 10 mm.

19. The power module assembly of claim 17, wherein each of said top and bottom said surfaces have a length and width each greater than about 10 mm.

20. The power module assembly of claim 19, wherein said package support comprises a thermally conductive comb having rectangular comb fingers disposed in each given space between adjacent ones of said packages and are in thermal contact with said side surfaces of the packages defining said each of said spaces.

21. The power module assembly of claim 19, wherein said package support comprises a conductive plate receiving and fastened to the ends of said packages adjacent the terminals of said at least one semiconductor device in each of said packages, whereby a cooling fluid can circulate through said given space between adjacent packages to cool each of said packages from each of its said sides.