Probe for scanning over a substrate and a data storage device

• US 20080013437A1
• Filed: 01/13/2006
• Published: 01/17/2008
• Est. Priority Date: 01/13/2005
• Status: Active Grant

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Wiesmann Rothuizen, Dorothea, Duerig, Urs, Albrecht, Thomas, Despont, Michel, Rothuizen, Hugo, Lantz, Mark
• Granted Patent: US 7,482,826 B2
• Time in Patent Office: Days
• US Class Current: 369/154
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 35/00 Methods or apparatus for measurement or analysis of nanostructures
• CPC Class Codes: G01Q 70/14 Particular materials
• CPC Class Codes: G01Q 80/00 Applications, other than SPM, of scanning-probe techniques manufacture or treatment of nanostructures B82B3/00; recording or reproducing information using near-field interaction G11B9/12, G11B11/24, G11B13/08
• CPC Class Codes: G11B 11/007 with reproducing by means directly associated with the tip of a microscopic electrical probe as defined in G11B9/14 details of heads G11B9/1409; disposition or mounting of heads G11B9/1418
• CPC Class Codes: G11B 9/1409 Heads

Abstract

A data storage device comprises a storage medium for storing data in the form of marks and at least one probe for scanning the storage medium. The storage medium may be comprised in a substrate. The probe comprises a cantilever that comprises terminals serving as electrical contacts an being during operation of the probe mechanically fixed to a probe-holding structure, which may be a common frame of the data storage device. A probe further comprises a supporting structure, to which the terminals are mechanically directly coupled or coupled via hinges and which extends away from the terminals. A tip with a nanoscale apex is provided. A beam structure comprises a heating resistor and is attached at ends to the supporting structure. The beam structure is thinned at least in a direction parallel to an axis of the tip compared to an area of the supporting structure abutting the beam structure.

Claims

1. A probe for scanning over a substrate, comprising

terminals,

a supporting structure, which is mechanically coupled to said terminals and which extends away from said terminals,

a tip with a nanoscale apex,

a beam structure which comprises a heating resistor and which is mechanically attached at its ends to said supporting structure and which is thinned at least in a direction parallel to an axis of said tip compared to an area of said supporting structure abutting said beam structure.

2. Probe according to claim 1, with an effective heating resistor distance within said beam structure from said heating resistor to each end of said beam structure being comparable to or longer than half of an effective temperature decay length, said effective temperature decay length depending on a thermal conductivity of said beam structure and on a thermal conductivity of a medium between said beam structure and said substrate and a spacing between said beam structure and said substrate and a thickness of said beam structure measured in a direction parallel to said axis of said tip.

3. Probe according to claim 2, with said effective heating resistor distance being comparable to or longer than said effective temperature decay length.

4. Probe according to claim 3, with said effective heating resistor distance being comparable or longer than twice said effective temperature decay length.

5. Probe according to claim 1, with said heating resistor having a resistor length extending between two abutting leads of said beam structure, said resistor length being comparable to or less than said effective temperature decay length.

6. Probe according to claim 5, with said heating resistor length being comparable to or less than half of said effective temperature decay length.

7. Probe according to claim 6, with said heating resistor length being comparable to or less than a quarter of said effective temperature decay length.

8. Probe according to claim 1, with beams of said beam structure having a width greater than said thickness.

9. Probe according to claim 1, with a carrier concentration in the heating resistor and a volume of said heating resistor being chosen in a way that a flicker noise does not exceed a thermal noise by one order of magnitude.

10. Probe according to one of claims 1, with said beam structure being mechanically reinforced by at least one reinforcement element having an electrically insulating property and having a thermally insulating property.

11. Probe according to claim 10, with said reinforcement element having a dielectric property, having a heat conductance at least three times less than silicon and having a modulus of elasticity of at least one-fifth of the modulus of elasticity of silicon.

12. Probe according to claim 11, with said reinforcement element comprising silicon nitride.

13. Probe according to claim 11, with said reinforcement element comprising silicon dioxide.

14. Probe according to claim 11, with said reinforcement element comprising ceramics.

15. Probe according to claim 11, with said reinforcement element comprising a polymer.

16. Probe according to claim 10, with said reinforcement element being a reinforcement bridge, that is attached to the beam structure and to said supporting structure.

17. Probe according to claim 10, with said reinforcement element being a reinforcement beam being attached to said beam structure at at least part of an extension of said beam structure.

18. Probe according to claim 17, with said reinforcement beam extending fully along said beam structure.

19. Probe according to claim 17, with said reinforcement beam extending from one of said ends of said beam structure towards said heating resistor and ending before said heating resistor.

20. Probe according to claim 17, with said reinforcement beams being attached in a sandwich manner to said beam structure.

21. Probe according to claim 17, with said reinforcement beam being formed in a u-shaped cross-section.

22. Probe according to claim 21, with said u-shaped cross-section tapering towards its extremities.

23. Probe according to claim 1, with said beam structure being formed in a u-shaped cross-section.

24. Probe according to claim 1, with said u-shaped cross-section tapering towards its extremities.

25. Probe according to claim 1, with said heating resistor being formed in a beam of said beam structure comprising said heating resistor and adjoining leads on both ends of said heating resistor, said lead being attached to said supporting structure and said supporting structure comprising at least one bridge element mechanically coupling and electrically decoupling parts of said supporting structure.

26. Probe according to claim 25, with said bridge element being a diode.

27. Probe according to claim 25, with said bridge element being two reverse biased diodes.

28. Probe according to claim 27, with said bridge element comprising a lateral cross-section with a sequence of a highly n-doped zone, a low n-doped zone, a highly p-doped zone and a highly n-doped zone.

29. Probe according to claim 1, with said terminals serving as electrical contacts and being during operation of said probe mechanically fixed to a probe-holding structure.

30. A data storage device comprising a storage medium for storing data in the form of marks and at least one probe comprising

terminals,

a supporting structure, which is mechanically coupled to said terminals and which extends away from said terminals,

a tip with a nanoscale apex,

a beam structure which comprises a heating resistor and which is mechanically attached at its ends to said supporting structure and which is thinned at least in a direction parallel to an axis of said tip compared to an area of said supporting structure abutting said beam structure for scanning said storage medium.