Semiconductor device

• US 20080023810A1
• Filed: 07/25/2007
• Published: 01/31/2008
• Est. Priority Date: 07/28/2006
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Arai, Yasuyuki, Yamazaki, Shunpei
• Granted Patent: US 7,838,976 B2
• Time in Patent Office: Days
• US Class Current: 257/679
• CPC Class Codes: G06K 19/07728 the record carrier comprising means for protection against impact or bending, e.g. protective shells or stress-absorbing layers around the integrated circuit
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/0775 arrangements for connecting the integrated circuit to the antenna
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/49855 for flat-cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/1517 : Multilayer substrate
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01Q 1/2216 : used in interrogator/reader equipment
• CPC Class Codes: H01Q 23/00 : Antennas with active circuits or circuit elements integrated within them or attached to them

Abstract

In inlets used for ID tags and the like, a defective connection between an integrated circuit part and an antenna is suppressed by improvement of tolerance for a bending or a pressing pressure. The integrated circuit part includes a semiconductor chip and a multilayer substrate having a concave portion. The semiconductor chip is mounted on the bottom of the concave portion. The multilayer substrate includes a connection electrode at the top surface and a connection electrode connected to the semiconductor chip on the bottom of the concave portion. The connection electrode on the bottom of the concave portion is connected to the connection electrode at the top surface by a penetration electrode inside a multilayer substrate. By such a configuration, the semiconductor chip is connected to the antenna.

Claims

1. A semiconductor device comprising:

a body structure having a concave portion;

a semiconductor chip fixed on the bottom of the concave portion;

a conductor formed inside the body structure;

a connection electrode connected to the semiconductor chip via the conductor; and

an antenna connected to the connection electrode.

2. The semiconductor device according to claim 1, wherein the connection electrode is formed on a top face of the body structure.

3. The semiconductor device according to claim 1, wherein the body structure includes a ceramic material.

4. A semiconductor device comprising:

a body structure having a concave portion and including a plurality of dielectric layers;

a semiconductor chip fixed on the bottom of the concave portion;

a penetration electrode which penetrates at least one layer of the plurality of dielectric layers;

a connection electrode connected to the semiconductor chip via the penetration electrode; and

an antenna connected to the connection electrode.

5. The semiconductor device according to claim 4, wherein the connection electrode is formed on a top face of the body structure.

6. The semiconductor device according to claim 4, wherein the plurality of dielectric layers include a ceramic material.

7. A semiconductor device comprising:

a body structure having a concave portion and including a plurality of dielectric layers;

a semiconductor chip fixed on the bottom of the concave portion;

a penetration electrode which penetrates at least one layer of the plurality of dielectric layers;

a connection electrode connected to the semiconductor chip via the penetration electrode;

an antenna connected to the connection electrode;

a conductive layer formed on the bottom of the concave portion; and

a passive element which is formed inside the body structure and is connected to the semiconductor chip via the conductive layer.

8. The semiconductor device according to claim 7, wherein the passive element is a resistor, a capacitor or a coil.

9. The semiconductor device according to claim 7, wherein the connection electrode is formed on a top face of the body structure.

10. The semiconductor device according to claim 7, wherein the plurality of dielectric layers include a ceramic material.

11. A semiconductor device comprising:

a body structure having a concave portion and including a plurality of dielectric layers;

a semiconductor chip fixed on the bottom of the concave portion;

a penetration electrode which penetrates at least one layer of the plurality of dielectric layers;

a connection electrode connected to the semiconductor chip via the penetration electrode;

a first antenna connected to the connection electrode;

a conductive layer formed on the bottom of the concave portion; and

a second antenna which is formed inside the body structure and is connected to the semiconductor chip via the conductive layer.

12. The semiconductor device according to claim 11, wherein the plurality of dielectric layers include a first dielectric layer and a second dielectric layer;

and wherein the second antenna includes a penetration electrode which penetrates the first dielectric layer, and connects a first wiring and a second wiring, the first wiring formed on the first dielectric layer and the second wiring formed on the second dielectric layer.

13. The semiconductor device according to claim 11, wherein the connection electrode is formed on a top face of the body structure.

14. The semiconductor device according to claim 11, wherein the first and second dielectric layers include a ceramic material.