Method for fabricating an integrated gate dielectric layer for field effect transistors
First Claim
1. A method for forming gate dielectric layers on a substrate, comprising:
- forming a silicon oxide layer on a substrate;
plasma treating the silicon oxide layer;
depositing a silicon nitride layer on the silicon oxide layer by an ALD process; and
thermal annealing the substrate.
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Abstract
Methods for forming a integrated gate dielectric layer on a substrate are provided. In one embodiment, the method includes forming a silicon oxide layer on a substrate, plasma treating the silicon oxide layer, depositing a silicon nitride layer on the silicon oxide layer by an ALD process, and thermal annealing the substrate. In another embodiment, the method includes precleaning a substrate, forming a silicon oxide layer on the substrate, plasma treating the silicon oxide layer, depositing a silicon nitride layer on the silicon oxide layer by an ALD process, and thermal annealing the substrate, wherein the formed silicon oxide layer and the silicon nitride layer has a total thickness less than 30 Å utilized as a gate dielectric layer in a gate structure.
37 Citations
20 Claims
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1. A method for forming gate dielectric layers on a substrate, comprising:
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forming a silicon oxide layer on a substrate; plasma treating the silicon oxide layer; depositing a silicon nitride layer on the silicon oxide layer by an ALD process; and thermal annealing the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for forming gate dielectric layers on a substrate, comprising:
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precleaning a substrate; forming a silicon oxide layer on the substrate; plasma treating the silicon oxide layer; depositing a silicon nitride layer on the silicon oxide layer by an ALD process; and thermal annealing the substrate, wherein the formed silicon oxide layer and the silicon nitride layer form a gate dielectric layer. - View Dependent Claims (18, 19)
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20. A method for forming a gate structure, comprising:
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precleaning a substrate; forming a silicon oxide layer on the substrate; plasma treating the silicon oxide layer; depositing a silicon nitride layer on the silicon oxide layer by an ALD process; thermal annealing the substrate, wherein the formed silicon oxide layer and the silicon nitride layer has a total thickness less than 30 Å and
forms a gate dielectric;forming a gate electrode on the gate dielectric; and forming source and drain regions in the substrate proximate the gate electrode.
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Specification