Gallium nitride-based light emitting diode and method of manufacturing the same

• US 20080035953A1
• Filed: 07/24/2007
• Published: 02/14/2008
• Est. Priority Date: 08/14/2006
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Gun, Woo, Beom, Choi, Go, Baik, Won, Oh
• Granted Patent: US 8,012,779 B2
• Time in Patent Office: Days
• US Class Current: 257/103
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A vertical GaN-based LED comprises an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having an irregular-surface structure which includes a first irregular-surface structure having irregularities formed at even intervals and a second irregular-surface structure having irregularities formed at uneven intervals, the second irregular-surface structure being formed on the first irregular-surface structure; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

Claims

1. A vertical GaN-based LED comprising:

an n-electrode;

an n-type GaN layer formed under the n-electrode, the n-type GaN layer having an irregular-surface structure which includes a first irregular-surface structure having irregularities formed at even intervals and a second irregular-surface structure having irregularities formed at uneven intervals, the second irregular-surface structure being formed on the first irregular-surface structure;

an active layer formed under the n-type GaN layer;

a p-type GaN layer formed under the active layer;

a p-electrode formed under the p-type GaN layer; and

a structure support layer formed under the p-electrode.

2. The vertical GaN-based LED according to claim 1 further comprising

a transparent conductive layer formed on the entire surface of the n-type GaN layer, the transparent conductive layer being positioned between the n-electrode and the n-type GaN layer.

3. A method of manufacturing a vertical GaN-based LED comprising:

sequentially forming an n-type GaN layer, an active layer, and a p-type GaN layer on a substrate;

forming a p-electrode on the p-type GaN layer;

forming a structure support layer on the p-electrode;

removing the substrate so as to expose the surface of the n-type GaN layer;

forming a first irregular-surface structure with even intervals on the exposed surface of the n-type GaN layer;

forming a second irregular-surface structure with uneven intervals on the first irregular-surface structure; and

forming an n-electrode on the n-type GaN layer having the first and second irregular-surface structures formed thereon.

4. The method according to 3,

wherein the forming of the first irregular-surface structure includes:

forming a predetermined shape of photoresist pattern with even intervals on the exposed n-type GaN layer; and

selectively etching portions of the n-type GaN layer by using the photoresist pattern as an etching mask.

5. The method according to claim 3,

wherein the forming of the second irregular-surface structure is performed by using a dry-etching or wet-etching process.

6. The method according to claim 3 further comprising

forming a transparent conductive layer on the n-type GaN layer, before the forming of the n-electrode.

7. A method of manufacturing a vertical GaN-based LED comprising:

patterning the surface of a substrate into an irregularity pattern with even intervals;

forming an n-type GaN layer such that the surface of the n-type GaN layer coming in contact with the substrate patterned into the irregularity pattern has a first irregular-surface structure with even intervals in accordance with the irregularity pattern;

sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer;

forming a p-electrode on the p-type GaN layer;

forming a structure support layer on the p-electrode;

removing the substrate so as to expose the first irregular-surface structure of the n-type GaN layer;

forming a second irregular-surface structure with uneven intervals on the exposed surface of the first irregular-surface structure; and

forming an n-electrode on the n-type GaN layer having the first and second irregular-surface structures formed thereon.

8. The method according to claim 7,

wherein the patterning of the substrate includes:

forming a predetermined shape of photoresist pattern with even intervals on the substrate; and

selectively etching portions of the substrate by using the photoresist pattern as an etching mask.

9. The method according to claim 7,

wherein the forming of the second irregular-surface structure is performed by a dry-etching or wet-etching process.

10. The method according to claim 7 further comprising

forming a transparent conductive layer on the n-type GaN layer, before the forming of the n-electrode.