System for measuring a sample with a layer containing a periodic diffracting structure

• US 20080037005A1
• Filed: 01/10/2006
• Published: 02/14/2008
• Est. Priority Date: 01/12/2005
• Status: Active Grant

• Current Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Original Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Inventors: Zhao, Guoheng, Bareket, Noah, Wack, Daniel
• Granted Patent: US 7,515,253 B2
• Time in Patent Office: Days
• US Class Current: 356/73
• CPC Class Codes: G01N 2021/213 Spectrometric ellipsometry
• CPC Class Codes: G01N 21/211 Ellipsometry optical thickness measurement G01B11/06
• CPC Class Codes: G01N 21/8422 Investigating thin films, e.g. matrix isolation method

Abstract

To measure the critical dimensions and other parameters of a one- or two-dimensional diffracting structure of a film, the calculation may be simplified by first performing a measurement of the thickness of the film, employing a film model that does not vary the critical dimension or parameters related to other characteristics of the structure. The thickness of the film may be estimated using the film model sufficiently accurately so that such estimate may be employed to simplify the structure model for deriving the critical dimension and other parameters related to the two-dimensional diffracting structure.

Claims

1. A method for measuring a sample with a layer containing a periodic diffracting structure, said method comprising:

directing a first beam of electromagnetic radiation of a plurality of wavelengths at said periodic diffracting structure;

detecting a diffraction of said first beam at said plurality of wavelengths from said diffracting structure;

finding a value for thickness of the layer using a film model of the layer; and

determining one or more parameters related to said diffracting structure using said thickness value and the diffraction detected.

2. The method of claim 1, wherein said finding employs a reflectometer or a ellipsometer.

3. The method of claim 1, wherein said finding employs a spectroscopic reflectometer or a spectroscopic ellipsometer.

4. The method of claim 1, wherein said finding employs a film model that employs data restricted to those within a range of selected wavelengths at which reflectivity of the periodic diffracting structure is less sensitive to changes in dimensions or profile of the structure than to such changes at wavelengths that are outside such range.

5. The method of claim 4, wherein said finding employs a film model that employs data restricted to those of wavelengths within red and near infrared ranges.

6. The method of claim 1, wherein said finding employs a film model that employs data restricted to those at selected wavelengths at which reflectivity of the periodic diffracting structure is less sensitive to changes in dimensions or profile of the structure than to such changes at wavelengths that are different from the selected wavelengths.

7. The method of claim 1, wherein said finding includes:

directing a second beam of electromagnetic radiation of a plurality of wavelengths at a section of said layer that includes at least a portion of said periodic diffracting structure; and

detecting intensity or ellipsometric data of the second beam after it has been modified by the section of said layer.

8. The method of claim 7, wherein said finding employs a film model that uses parameters including thickness and indices of refraction of the layer, but no parameter related to dimensions or profile of the diffracting structure.

9. The method of claim 8, wherein said finding varies values of parameters related to indices of refraction of the layer.

10. The method of claim 1, wherein said finding finds the thickness value from the diffraction detected.

11. The method of claim 10, wherein said finding employs a film model that uses parameters including thickness and indices of refraction of the layer, but no parameter related to dimensions or profile of the diffracting structure.

12. The method of claim 11, wherein said finding varies values of parameters related to indices of refraction of the layer:

13. The method of claim 1, wherein said finding employs a film model that uses parameters including thickness and indices of refraction of the layer, but no parameter related to dimensions or profile of the diffracting structure.

14. The method of claim 1, wherein said finding varies values of parameters related to indices of refraction of the layer.

15. The method of claim 1, wherein said finding finds the value for thickness by measuring a section of the layer that includes at least a portion of the structure from which said diffraction is detected.

16. The method of claim 1, wherein said determining includes applying a regression algorithm that uses the thickness value.

17. The method of claim 1, wherein said determining includes applying a regression algorithm that determines the one or more parameters related to said diffracting structure.

18. The method of claim 17, wherein said regression algorithm varies values of only parameters pertaining to dimensions and/or profile of the diffracting structure, and wherein said parameters that are varied do not include thickness of the layer.

19. The method of claim 18, wherein said parameters that are varied pertain to width or diameter and side wall angle of the structure.

20. The method of claim 1, wherein said detecting detects intensity or ellipsometric data from the diffraction, and said determining determines the one or more parameters related to said diffracting structure using the detected intensity or ellipsometric data.

21. The method of claim 1, wherein said determining comprises constructing a reference database using the thickness value.

22. The method of claim 1, said determining further comprising a linear or non-linear optimization process that uses the thickness value as a fixed parameter.

23. The method of claim 1, said determining comprising a linear or non-linear optimization process that uses the thickness value as seed value in a parameter estimation process where the thickness value is floated along with the parameters of the diffracting structure.

24. The method of claim 1, wherein said finding also finds the value(s) of the refractive index of the layer using a film model.

25. The method of claim 24, said determining comprising using the value(s) of the refractive index of the layer to generate seed or starting values in a linear or non-linear optimization process for some of the parameters of the diffracting structure, thereby accelerating the convergence of the process.

26. The method of claim 1, said method further comprising adjusting or selecting an optical illumination angle and/or aperture size(s) of the first beam and/or collection angle for the detecting, in response to the thickness value, to maximize sensitivity of data to variations in parameters of the diffracting structure.

27. The method of claim 26, wherein the finding precedes the directing and detecting and finds the thickness value of a section of said layer that includes at least a portion of said periodic diffracting structure, and wherein said directing directs and said detecting detects from said section or a different section of said layer that includes at least a portion of said periodic diffracting structure.

28. The method of claim 26, wherein the finding precedes the directing and detecting and finds the thickness value of a section of said layer that includes at least a portion of said periodic diffracting structure, and wherein said directing directs the first beam to, and said detecting detects from, a section of a layer that includes a periodic diffracting structure different from the one from which the thickness value is found.