Technique for low-temperature ion implantation

  • US 20080044938A1
  • Filed: 08/15/2006
  • Published: 02/21/2008
  • Est. Priority Date: 08/15/2006
  • Status: Active Grant
First Claim
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1. An apparatus for low-temperature ion implantation, the apparatus comprising:

  • a pre-chill station located in proximity to an end station in an ion implanter;

    a cooling mechanism within the pre-chill station;

    a loading assembly coupled to the pre-chill station and the end station; and

    a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.

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