Electro-optical device and thin film transistor and method for forming the same
First Claim
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1. A method of manufacturing a display device including a thin film transistor, the method comprising the steps of:
- forming a gate electrode over a glass substrate;
forming a gate insulating film comprising silicon nitride on said gate electrode;
forming a first semiconductor film comprising amorphous silicon over said gate electrode with said gate insulating film interposed therebetween;
forming an N-type semiconductor film on said first semiconductor film;
patterning said first and N-type semiconductor films using a first photomask;
forming a conductive layer on at least the patterned N-type semiconductor film;
etching a portion of said conductive layer to form source and drain electrodes using a resist formed by a second photomask;
etching a portion of the patterned N-type semiconductor film to form source and drain regions by dry etching using said resist wherein a channel forming region is formed in said first semiconductor film between said source and drain regions; and
forming a passivation film over said glass substrate to cover at least said source and drain electrodes, said channel forming region, a part of a surface of said source region not covered by said source electrode and a part of a surface of said drain region not covered by said drain electrode after removing said resist.
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Abstract
A semiconductor device having a pair of impurity doped second semiconductor layers, formed on a first semiconductor layer having a channel formation region therein, an outer edge of the first semiconductor film being at least partly coextensive with an outer edge of the impurity doped second semiconductor layers. The semiconductor device further includes source and drain electrodes formed on the pair of impurity doped second semiconductor layers, wherein the pair of impurity doped second semiconductor layers extend beyond inner sides edges of the source and drain electrodes so that a stepped portion is formed from an upper surface of the source and drain electrodes to a surface of the first semiconductor film.
156 Citations
46 Claims
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1. A method of manufacturing a display device including a thin film transistor, the method comprising the steps of:
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forming a gate electrode over a glass substrate;
forming a gate insulating film comprising silicon nitride on said gate electrode;
forming a first semiconductor film comprising amorphous silicon over said gate electrode with said gate insulating film interposed therebetween;
forming an N-type semiconductor film on said first semiconductor film;
patterning said first and N-type semiconductor films using a first photomask;
forming a conductive layer on at least the patterned N-type semiconductor film;
etching a portion of said conductive layer to form source and drain electrodes using a resist formed by a second photomask;
etching a portion of the patterned N-type semiconductor film to form source and drain regions by dry etching using said resist wherein a channel forming region is formed in said first semiconductor film between said source and drain regions; and
forming a passivation film over said glass substrate to cover at least said source and drain electrodes, said channel forming region, a part of a surface of said source region not covered by said source electrode and a part of a surface of said drain region not covered by said drain electrode after removing said resist. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of manufacturing a display device including a thin film transistor, the method comprising the steps of:
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forming a gate electrode over a glass substrate;
forming a gate insulating film comprising silicon nitride on said gate electrode;
forming a first semiconductor film over said gate electrode with said gate insulating film interposed therebetween;
forming an N-type semiconductor film on said first semiconductor film;
patterning said first and N-type semiconductor films using a first photomask;
forming a conductive layer on at least the patterned N-type semiconductor film;
etching a portion of said conductive layer to form source and drain electrodes using a resist formed by a second photomask;
etching a portion of the patterned N-type semiconductor film to form source and drain regions by dry etching without removing said resist wherein a channel forming region is formed in said first semiconductor film between said source and drain regions; and
forming a passivation film over said glass substrate to cover at least said source and drain electrodes, said channel forming region, a part of a surface of said source region not covered by said source electrode and a part of a surface of said drain region not covered by said drain electrode after removing said resist. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method of manufacturing a display device including a thin film transistor, the method comprising the steps of:
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forming a gate electrode over a glass substrate;
forming a gate insulating film comprising silicon nitride on said gate electrode;
forming a first semiconductor film comprising amorphous silicon over said gate electrode with said gate insulating film interposed therebetween;
forming an N-type semiconductor film on said first semiconductor film;
patterning said first and N-type semiconductor films using a first photomask;
forming a conductive layer on at least the patterned N-type semiconductor film;
etching a portion of said conductive layer to form source and drain electrodes by dry etching using a resist formed by a second photomask;
etching a portion of the patterned N-type semiconductor film to form source and drain regions using said resist wherein a channel forming region is formed in said first semiconductor film between said source and drain regions;
forming a passivation film over said glass substrate to cover at least said source and drain electrodes and said channel forming region after removing said resist; and
forming a pixel electrode over said passivation film wherein said pixel electrode is electrically connected to said source electrode or said drain electrode. - View Dependent Claims (18, 19)
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20. A method of manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode over a glass substrate;
forming a gate insulating film comprising silicon nitride on said gate electrode;
forming a first semiconductor film over said gate electrode with said gate insulating film interposed therebetween;
forming an N-type semiconductor film on said first semiconductor film;
patterning said first and N-type semiconductor films using a first photomask;
forming a conductive layer on at least the patterned N-type semiconductor film;
etching a portion of said conductive layer to form source and drain electrodes using a resist formed by a second photomask;
etching a portion of the patterned N-type semiconductor film to form source and drain regions by dry etching without removing said resist wherein a channel forming region is formed in said first semiconductor film between said source and drain regions; and
forming a passivation film over said glass substrate to cover at least said source and drain electrodes and said channel forming region after removing said resist; and
forming a pixel electrode over said passivation film wherein said pixel electrode is electrically connected to said source electrode or said drain electrode. - View Dependent Claims (21, 22)
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23. A method of manufacturing a display device including a thin film transistor over a glass substrate, the method comprising steps of:
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forming a resist on a conductive layer wherein said conductive layer is formed on an N-type semiconductor film, said N-type semiconductor film is formed on a first semiconductor film, and said first semiconductor film is formed over a gate electrode with a gate insulating film comprising silicon nitride interposed therebetween;
etching a portion of said conductive layer to form source and drain electrodes using said resist;
etching a portion of said N-type semiconductor film to form source and drain regions without removing said resist wherein a channel forming region is formed in said first semiconductor film between said source and drain regions; and
forming a passivation film over said glass substrate to cover at least said source and drain electrodes and said channel forming region after removing said resist. - View Dependent Claims (24, 25, 26)
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27. A method of manufacturing a display device including a thin film transistor over a glass substrate, the method comprising steps of:
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forming a resist on a conductive layer wherein said conductive layer is formed on an N-type semiconductor film, said N-type semiconductor film is formed on a first semiconductor film comprising amorphous silicon, and said first semiconductor film is formed over a gate electrode with a gate insulating film comprising silicon nitride interposed therebetween;
etching a portion of said conductive layer to form source and drain electrodes using said resist;
etching a portion of said N-type semiconductor film to form source and drain regions using said resist wherein a channel forming region is formed in said first semiconductor film between said source and drain regions; and
forming a passivation film over said glass substrate to cover at least said source and drain electrodes and said channel forming region after removing said resist. - View Dependent Claims (28, 29, 30)
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31. A method of manufacturing a display device including a thin film transistor over a glass substrate, the method comprising steps of:
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forming a resist on a conductive layer wherein said conductive layer is formed on an N-type semiconductor film, said N-type semiconductor film is formed on a first semiconductor film comprising amorphous silicon, and said first semiconductor film is formed over a gate electrode with a gate insulating film comprising silicon, nitride interposed therebetween;
etching a portion of said conductive layer to form source and drain electrodes using said resist;
etching a portion of said N-type semiconductor film by dry etching to form source and drain regions without removing said resist wherein a channel forming region is formed in said first semiconductor film between said source and drain regions; and
forming a passivation film over said glass substrate to cover at least said source and drain electrodes and said channel forming region after removing said resist. - View Dependent Claims (32, 33, 34)
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35. A method of manufacturing a display device including a thin film transistor over a glass substrate, the method comprising steps of:
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forming a resist on a conductive layer wherein said conductive layer is formed on an N-type semiconductor film, said N-type semiconductor film is formed on a first semiconductor film comprising amorphous silicon, and said first semiconductor film is formed over a gate electrode with a gate insulating film comprising silicon nitride interposed therebetween;
etching a portion of said conductive layer to form source and drain electrodes using said resist;
etching a portion of said N-type semiconductor film by dry etching to form source and drain regions using said resist wherein a channel forming region is formed in said first semiconductor film between said source and drain regions; and
forming a passivation film over said glass substrate to cover at least said source and drain electrodes and said channel forming region after removing said resist. - View Dependent Claims (36, 37, 38)
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39. A method of manufacturing a display device including a thin film transistor over a glass substrate, the method comprising steps of:
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forming a resist on a conductive layer wherein said conductive layer is formed on an N-type semiconductor film, said N-type semiconductor film is formed on a first semiconductor film and said first semiconductor film is formed over a gate electrode with a gate insulating film comprising silicon nitride interposed therebetween;
etching a portion of said conductive layer to form source and drain electrodes using said resist;
etching a portion of said N-type semiconductor film to form source and drain regions without removing said resist wherein a channel forming region is formed in said first semiconductor film between said source and drain regions; and
forming a passivation film over said glass substrate to cover at least said source and drain electrodes, said channel forming region, a part of a surface of said source region not covered by said source electrode and a part of a surface of said drain region not covered by said drain electrode - View Dependent Claims (40, 41, 42)
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43. A method of manufacturing a display device including a thin film transistor over a glass substrate, the method comprising steps of:
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forming a resist on a conductive layer wherein said conductive layer is formed on an N-type semiconductor film, said N-type semiconductor film is formed on a first semiconductor film, and said first semiconductor film is formed over a gate electrode with a gate insulating film comprising silicon nitride interposed therebetween;
etching a portion of said conductive layer to form source and drain electrodes using said resist;
etching a portion of said N-type semiconductor film to form source and drain regions using said resist wherein a channel forming region is formed in said first semiconductor film between said source and drain regions; and
forming a passivation film over said glass substrate to cover at least said source and drain electrodes, said channel forming region, a part of a surface of said source region not covered by said source electrode and a part of a surface of said drain region not covered by said drain electrode. - View Dependent Claims (44, 45, 46)
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsKusumoto, Naoto, Zhang, Hongyong
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current438/159
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CPC Class CodesG02F 1/13454 Drivers integrated on the a...H01L 21/02422 Non-crystalline insulating ...H01L 21/02488 Insulating materialsH01L 21/02532 Silicon, silicon germanium,...H01L 21/02675 using laser beamsH01L 21/02686 Pulsed laser beamH01L 27/1214 comprising a plurality of T...H01L 27/1229 with different crystal prop...H01L 27/1274 using crystallisation of am...H01L 29/41733 for thin film transistors w...H01L 29/66757 Lateral single gate single ...H01L 29/66765 Lateral single gate single ...H01L 29/78675 with normal-type structure,...H01L 29/78678 with inverted-type structur...
