Multi-layer cable design and method of manufacture

• US 20080060832A1
• Filed: 08/27/2007
• Published: 03/13/2008
• Est. Priority Date: 08/28/2006
• Status: Abandoned Application

• Current Assignee: Ali Razavi
• Original Assignee: Ali Razavi
• Inventors: Razavi, Ali
• Application Number:
  US11/895,746
• Publication Number:
  US 20080060832A1
• Time in Patent Office: Days
• US Class Current: 174/102C
• CPC Class Codes: H01B 13/225 Screening coaxial cables

Abstract

A novel method of designing and fabricating flexible and lightweight cable [100] having a central conductor [110], a dielectric layer [130], an outer conductor [150] and an insulation coating [170] using thin film technology is disclosed. The dielectric layer [130] is ‘grown’ on dielectric layer [130] using electrophoretic deposition to a specified thickness, based upon its intended use. It may include nano-diamonds. Ion beam assisted deposition is used to metalize the cable dielectric layer [130]. This may be ion beam assisted sputtering, ion beam assisted evaporative deposition or ion beam assisted cathodic arc deposition. In an alternative embodiment, the outer conductor may be etched to provide greater flexibility, or to add a piezoelectric layer. The central conductor [110] may be created from dielectric fibers [113] which are metalized as described above. The piezoelectric layer added to create ultrasonic transducer cables.

Claims

1. A method of creating a flexible, light weight cable comprising the steps of:

a) providing a central conductor [110];

b) growing a thin film dielectric layer [130] to the central conductor [110];

c) processing the dielectric layer [130] with an ion beam; and

d) metalizing the dielectric layer [130] with thin film metalizing technology.

2. The method of claim 1, wherein the central conductor [110] is a solid metal conductor.

3. The method of claim 1, wherein the central conductor [110] is a hollow metal conductor.

4. The method of claim 1, wherein the central conductor [110] is comprised of dielectric strands that are metalized.

5. The method of claim 1, wherein the step of metalizing includes metalizing with sputtering technology.

6. The method of claim 1, wherein the step of metalizing includes metalizing with evaporative deposition technology.

7. The method of claim 1, wherein the step of metalizing includes metalizing with cathodic arc deposition technology.

8. The method of claim 1, wherein the dielectric layer is grown to a desired thickness using electrophoretic deposition.

9. The method of claim 1, wherein the dielectric layer includes nano-diamond particles.

10. The method of claim 1, wherein the dielectric layer includes nano-graphite particles.

11. The method of claim 1, further comprising the step of:

a) adding a photoimageable mask [160] on a portion of the outer conductor; and

b) etching away the outer conductor [150] in regions which have no photoimageable mask [160] to result in a more flexible outer conductor [150].

12. The method of claim 1, further comprising the step of:

a) adding a photoimageable mask [160] on a portion of the outer conductor;

b) coating the outer conductor [150] with a piezoelectric layer [163] and

c) etching away the piezoelectric layer [163] and outer conductor [150] in regions which have no photoimageable mask [160] to result in a piezoelectric transducer cable.

13. A flexible, lightweight cable comprising:

a) a central conductor [110];

b) a thin film dielectric layer [130] coating the central conductor [110] having its surface process with an ion beam; and

c) a thin film metal coating covering the dielectric layer [130] applied with thin film metalizing technology.

14. The cable of claim 13, wherein the central conductor [110] is a solid metal conductor.

15. The cable of claim 13, wherein the central conductor [110] is a hollow metal conductor.

16. The cable of claim 13, wherein the central conductor [110] is comprised of dielectric strands that are metalized.

17. The cable of claim 13, wherein the thin film metal coating is created with sputtering technology.

18. The cable of claim 13, wherein the thin film metal coating is created with evaporative deposition technology.

19. The cable of claim 13, wherein the thin film metal coating is created with cathodic arc deposition technology.