Harmonic phase tuning filter for RF switches

• US 20080079514A1
• Filed: 07/12/2007
• Published: 04/03/2008
• Est. Priority Date: 10/02/2006
• Status: Active Grant

• Current Assignee: Skyworks Solutions Incorporated
• Original Assignee: Skyworks Solutions Incorporated
• Inventors: Zhu, Yu, Nabokin, Sergey, Prikhodko, Dima, Sprinkle, Steven C., Chiesa, Jason, Tkachenko, Gene A., Carter, Richard A., Peluso, Beverly A.
• Granted Patent: US 7,808,342 B2
• Time in Patent Office: Days
• US Class Current: 333/175
• CPC Class Codes: H03H 7/0115 comprising only inductors and capacitors H03H7/075, H03H7/09, H03H7/12, H03H7/13 take precedence
• CPC Class Codes: H03H 7/1758 Series LC in shunt or branch path H03H7/1791 takes precedence
• CPC Class Codes: H03H 7/1766 Parallel LC in series path H03H7/1783 takes precedence
• CPC Class Codes: H03H 7/38 Impedance-matching networks
• CPC Class Codes: H03H 7/465 having variable circuit topology, e.g. including switches

Abstract

According to one exemplary embodiment, a switching module includes a first harmonic phase tuning filter coupled to a first input of an RF switch. The first harmonic phase tuning filter is configured to provide an output impedance that substantially matches an input impedance of the RF switch at approximately a fundamental frequency and to provide a low impedance at approximately a harmonic frequency generated by the RF switch. The first harmonic phase tuning filter includes an LC circuit coupled between an output terminal of the first harmonic phase tuning filter and a ground and tuned to provide the low impedance at approximately the harmonic frequency generated by the RF switch. The RF switching module further includes a second harmonic phase tuning filter coupled to a second input of the RF switch. The first and second harmonic phase tuning filters can be fabricated on a single semiconductor die.

Claims

1. A switching module comprising:

a first harmonic phase tuning filter coupled to a first input of an RF switch;

said first harmonic phase tuning filter configured to provide an output impedance that substantially matches an input impedance of said RF switch at approximately a fundamental frequency and to provide a low impedance to a ground at approximately a harmonic frequency generated by said RF switch.

2. The switching module of claim 1, wherein said low impedance causes substantially a short circuit to said ground at approximately said harmonic frequency.

3. The switching module of claim 1, wherein said harmonic frequency is a third harmonic frequency.

4. The switching module of claim 1, wherein said first harmonic phase tuning filter comprises an LC circuit coupled between an output terminal of said first harmonic phase tuning filter and said ground.

5. The switching module of claim 4, wherein said LC circuit is tuned to provide said low impedance to said ground at approximately said harmonic frequency.

6. The switching module of claim 1, wherein said first harmonic phase tuning filter comprises a capacitor and a inductor coupled in parallel between input and output terminals of said first harmonic phase tuning filter.

7. The switching module of claim 1, wherein said first harmonic phase tuning filter comprises a capacitor coupled between said input terminal and said ground.

8. The switching module of claim 1, wherein said first harmonic phase tuning filter comprises a capacitor coupled in series with an inductor between an output terminal of said first harmonic phase tuning filter and said ground.

9. The switching module of claim 1 further comprising a second harmonic phase tuning filter coupled to a second input of said RF switch.

10. The switching module of claim 9, wherein said RF switch and said first and second harmonic phase tuning filters are fabricated on a single semiconductor die.

17. The switching module of claim 1, wherein said input section comprises an LC circuit coupled to a ground.

18. The switching module of claim 17, wherein said LC circuit provides a low impedance to said ground at approximately said harmonic frequency.

11. A switching module comprising:

a first harmonic phase tuning filter coupled to a first input of an RF switch;

said first harmonic phase tuning filter including an input section comprising a Pi-type filter and an output section;

said first harmonic phase tuning filter configured to provide an output impedance that substantially matches an input impedance of said RF switch at approximately a fundamental frequency and to provide a selected impedance at approximately a harmonic frequency generated by said RF switch.

12. The switching module of claim 11, wherein said selected impedance is greater than or equal to an impedance that causes substantially a short circuit at approximately said harmonic frequency.

13. The switching module of claim 11, wherein said selected impedance is less than or equal to an impedance that causes substantially an open circuit at approximately said harmonic frequency.

14. The switching module of claim 11, wherein said harmonic frequency is a third harmonic frequency.

15. The switching module of claim 11, wherein said output section of said first harmonic phase tuning filter determines said selected impedance.

16. The switching module of claim 15, wherein said output section of said first harmonic phase tuning filter comprises an LC circuit.

19. The switching module of claim 11 further comprising a second harmonic phase tuning filter coupled to a second input of said RF switch.

20. The switching module of claim 19, wherein said RF switch and said first and second harmonic phase tuning filters are fabricated on a single semiconductor die.