LIGHT-EMITTING DEVICE

• US 20080105885A1
• Filed: 10/23/2007
• Published: 05/08/2008
• Est. Priority Date: 10/24/2006
• Status: Active Grant

• Current Assignee: Xiamen San'An Optoelectronics Co.Ltd. (Sanan Optoelectronics Company Limited)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Hino, Tomonori, Okano, Nobukata, Kuramochi, Hisayoshi, Watanabe, Yoshiaki, Ohashi, Tatsuo
• Granted Patent: US 8,575,643 B2
• Time in Patent Office: Days
• US Class Current: 257/96
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12035 Zener diode
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting device includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; an insulating layer covering the second electrode; a first opening provided to pass through the insulating layer, the second electrode, the second compound semiconductor layer, and the active layer; a second opening provided to pass through the insulating layer; a first electrode formed on an exposed portion of the first compound semiconductor layer at the bottom of the first opening; a first electrode extension extending from the first electrode to the insulating layer through the first opening and a first pad portion including a portion of the first electrode extension on the insulating layer; and a second pad portion connected to an exposed portion of the second electrode at the bottom of the second opening.

Claims

1. A light-emitting device comprising:

(A) a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type different from the first conductivity type;

(B) a second electrode formed on the second compound semiconductor layer;

(C) an insulating layer covering the second electrode;

(D) a first opening provided to pass through the insulating layer, the second electrode, the second compound semiconductor layer, and the active layer and expose the first compound semiconductor layer at the bottom;

(E) a second opening provided to pass through the insulating layer and expose the second electrode at the bottom;

(F) a first electrode formed on the exposed portion of the first compound semiconductor layer at the bottom of the first opening;

(G) a first electrode extension extending from the first electrode to the insulating layer through the first opening and a first pad portion including a portion of the first electrode extension on the insulating layer; and

(H) a second pad portion connected to the exposed portion of the second electrode at the bottom of the second opening.

2. The light-emitting device according to claim 1, wherein a first electrode is provided.

3. The light-emitting device according to claim 1, wherein a plurality of first electrodes is provided.

4. The light-emitting device according to claim 3, wherein the plurality of first electrodes is arranged in rotational symmetry with respect to a normal line passing through the center of the light-emitting device or arranged in symmetry with respect to a virtual plane including the normal line.

5. The light-emitting device according to claim 3, wherein first electrode extensions extending from the plurality of first electrodes are combined to form a first pad portion.

6. The light-emitting device according to claim 5, wherein a plurality of second pad portions is provided.

7. The light-emitting device according to claim 6, wherein two second pad portions are provided and arranged symmetrically with respect to a virtual plane including the center of the light-emitting device and passing through the center of the first pad portion.

8. The light-emitting device according to claim 3, wherein the distance from one of the first electrodes to the closest first electrode is 3×

10<sup>−

4</sup> m or less.

9. The light-emitting device according to claim 1, wherein the insulating layer includes a first portion provided between a portion of the first electrode extension which is positioned on the insulating layer and the second electrode and a second portion provided in the other region.

10. The light-emitting device according to claim 9, wherein the dielectric constant ∈

of a constituent material of at least the first portion of the insulating layer is 1×

10¹ or more.

11. The light-emitting device according to claim 10, wherein the constituent material of at least the first portion of the insulating layer is at least one material selected from the group consisting of titanium oxide, lead-based relaxer ceramics, and TiO₃-based ceramics.

12. The light-emitting device according to claim 10, wherein the capacity of a capacitor formed by the first electrode extension disposed on the insulating layer, the first portion of the insulating layer, and the second electrode is 1×

10<sup>−

12</sup> F or more.

13. The light-emitting device according to claim 9, wherein the first portion of the insulating layer includes a semiconductor ceramic layer, and the first electrode extension disposed on the insulating layer, the first portion of the insulating layer, and the second electrode form a varistor portion.

14. The light-emitting device according to claim 13, wherein the constituent material of the semiconductor ceramic layer is at least one selected from the group consisting of zinc oxide, strontium titanate, and silicon carbide.

15. The light-emitting device according to claim 9, wherein the constituent material of the second portion of the insulating layer is SOG.

16. The light-emitting device according to claim 1, further comprising a first discharge electrode portion extending from the first electrode extension on the insulating layer and a second discharge electrode portion extending from the second pad portion on the insulating layer, wherein the ends of the first discharge electrode portion and the second discharge electrode portion are opposed to each other to form a discharge gap.

17. The light-emitting device according to claim 16, wherein the first discharge electrode portion and the second discharge electrode portion are composed of a refractory metal material or graphite.

18. The light-emitting device according to claim 1, wherein the insulating layer extends on the sidewall of the first opening, and the first electrode extension extends from the first electrode to the insulating layer through the extension of the insulating layer on the sidewall of the first opening.

19. The light-emitting device according to claim 18, wherein the first compound semiconductor layer, the active layer, and the second compound semiconductor layer are composed of a group III-V compound semiconductor containing at least gallium as a group III element and at least nitrogen as a group V element.