STABILIZED RESISTIVE SWITCHING MEMORY
First Claim
Patent Images
1. A resistive switching integrated circuit memory comprising:
- a resistive switching memory cell including a resistive switching material comprising a transition metal compound containing an extrinsic ligand;
a write circuit for placing said resistive switching memory cell in a first resistive state or a second resistive state depending on information input into said memory, wherein the resistance of said resistance switching material is higher in said second resistance state than in said first resistance state; and
a read circuit for sensing the state of said memory cell and providing an electrical signal corresponding to the sensed state of said memory cell.
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Abstract
A non-volatile resistive switching memory that includes a material which changes between the insulative and conductive states. The material is stabilized against charge trapping by oxygen vacancies by an extrinsic ligand, such as carbon.
44 Citations
25 Claims
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1. A resistive switching integrated circuit memory comprising:
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a resistive switching memory cell including a resistive switching material comprising a transition metal compound containing an extrinsic ligand; a write circuit for placing said resistive switching memory cell in a first resistive state or a second resistive state depending on information input into said memory, wherein the resistance of said resistance switching material is higher in said second resistance state than in said first resistance state; and a read circuit for sensing the state of said memory cell and providing an electrical signal corresponding to the sensed state of said memory cell. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of making a non-volatile resistive switching integrated circuit memory, said method comprising:
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providing an integrated circuit substrate; forming a resistive switching material on said substrate, said resistive switching material comprising a transition metal oxide and an extrinsic ligand capable of passivating oxygen vacancies in said transition metal oxide in at least a coordination region about each atom of said transition metal; and completing said integrated circuit to include said resistive switching material in an active element in said integrated circuit. - View Dependent Claims (13, 14, 15)
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16. A method of making a non-volatile resistive switching integrated circuit memory, said method comprising:
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providing an integrated circuit substrate; forming a resistive switching material on said substrate, said resistive switching material comprising a transition metal compound capable of switching between a conducting state and an insulating state; stabilizing the vacancies in said transition metal compound; and completing said integrated circuit to include said transition metal compound in an active element in said integrated circuit. - View Dependent Claims (17, 18, 19)
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20. A precursor for making a resistive switching material capable of switching between a conducting state and an insulating state, said precursor comprising a transition metal and a ligand capable of stabilizing said insulating state so that said material has a memory window that changes less than 50% over a temperature range of from minus 50°
- C. to 75°
C. - View Dependent Claims (21, 22, 23)
- C. to 75°
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24. A resistive switching integrated circuit memory comprising:
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a resistive switching memory cell including a resistive switching material comprising a transition metal and carbon; a write circuit for placing said resistive switching memory cell in a first resistive state or a second resistive state depending on information input into said memory, wherein the resistance of said resistance switching material is higher in said second resistance state than in said first resistance state; and a read circuit for sensing the state of said memory cell and providing an electrical signal corresponding to the sensed state of said memory cell. - View Dependent Claims (25)
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Specification