Semiconductor device and method for fabricating the same

• US 20080122112A1
• Filed: 01/07/2008
• Published: 05/29/2008
• Est. Priority Date: 08/05/2005
• Status: Active Grant

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Ogawa, Shinichi
• Granted Patent: US 7,566,976 B2
• Time in Patent Office: Days
• US Class Current: 257/774
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners

Abstract

A semiconductor device has a porous low-dielectric-constant film formed on a substrate and having an opening and a fine particle film composed of a plurality of aggregately deposited fine particles each having a diameter of not less than 1 nm and not more than 2 nm and formed on a surface of the portion of the porous low-dielectric-constant film which is formed with the opening. The fine particles are filled in voids exposed at the surface of the portion of the porous low-dielectric-constant film which is formed with the opening.

Claims

1-6. -6. (canceled)

7. A semiconductor device comprising:

a porous low-dielectric-constant film formed on a substrate and having an opening; and

a fine particle film composed of a plurality of aggregately deposited fine particles formed on a surface of the portion of the porous low-dielectric-constant film which is formed with the opening, wherein

the fine particles are filled in voids exposed at the surface of the portion of the porous low-dielectric-constant film which is formed with the opening.

8. The semiconductor device of claim 7, wherein the size of the fine particles is equal to the size of the voids.

9. The semiconductor device of claim 7, wherein a conductive material forming a via or an interconnect is buried in the opening such that the fine particle film is interposed between the conductive material and the porous low-dielectric-constant film.

10. The semiconductor device of claim 9, wherein a barrier film is interposed between at least the conductive material and the fine particle film.

11. The semiconductor device of claim 10, wherein the barrier film is made of a material selected from TaN, TiN and WN.

12. The semiconductor device of claim 9, wherein the conductive material is selected from Cu, W, Al and Au.

13. The semiconductor device of claim 7, wherein the porous low-dielectric-constant film contains a methyl-containing-polysiloxane-based material.

14. The semiconductor device of claim 7, wherein each of the fine particles is made of a fullerene or silicon dioxide.