Methods of cleaning a semiconductor device and methods of manufacturing a semiconductor device using the same

• US 20080124909A1
• Filed: 11/09/2007
• Published: 05/29/2008
• Est. Priority Date: 11/10/2006
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kang, Dae-Keun, Lee, Keum-Joo, Bae, Jin-Hye
• Granted Patent: US 7,582,539 B2
• Time in Patent Office: Days
• US Class Current: 438/595
• CPC Class Codes: C11D 2111/22 Electronic devices, e.g. PCBs or semiconductors
• CPC Class Codes: C11D 3/3947 Liquid compositions
• CPC Class Codes: C11D 7/06 Hydroxides
• CPC Class Codes: C11D 7/08 Acids
• CPC Class Codes: H01L 21/02071 the processing being a delineation, e.g. RIE, of conductive layers
• CPC Class Codes: H01L 21/28061 the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction H01L21/28052 takes precedence
• CPC Class Codes: H01L 21/28247 passivation or protection of the electrode, e.g. using re-oxidation
• CPC Class Codes: H01L 29/6656 using multiple spacer layers, e.g. multiple sidewall spacers

Abstract

The present invention provides methods of cleaning a semiconductor device by removing contaminants, such as particles and/or etching by-products, from a structure of a semiconductor device using a first cleaning solution including a mixture of ammonium hydroxide (NH₄OH), hydrogen peroxide (H₂O₂) and deionized (DI) water, and a second cleaning solution including ozone (O₃) water. The present invention also provides methods of manufacturing a semiconductor device using these methods of cleaning the semiconductor device.

Claims

1. A method of removing contaminates from a structure of a semiconductor device, wherein said structure comprises a metal, said method comprising:

cleaning said device with a first cleaning solution, said first cleaning solution comprising a mixture of ammonium hydroxide (NH₄OH), hydrogen peroxide (H₂O₂) and deionized (DI) water; and

cleaning said device with a second cleaning solution, said second cleaning solution comprising ozone (O₃) water or hydrogen fluoride (HF),

whereby contaminants are removed from said structure of said semiconductor device.

2. The method of claim 1, wherein said structure comprises tungsten silicide (WSi₂).

3. The method of claim 1, wherein said structure comprises a gate pattern, said gate pattern comprising a gate insulation layer pattern and a gate conductive layer pattern.

4. The method of claim 1, wherein said first cleaning solution comprises a mixture of ammonium hydroxide (NH₄OH), hydrogen peroxide (H₂O₂) and deionized (DI) water mixed at a volume ratio of about 1:

4;

20.

5. The method of claim 1, wherein the concentration of ozone (O₃) in the ozone (O₃) water is about 10 ppm to about 100 ppm.

6. The method of claim 1, wherein cleaning with a second cleaning solution is performed at a temperature in a range of about 0°

C. to about 50°

C.

7. The method of claim 1, wherein said second cleaning solution comprises an aqueous hydrogen fluoride (HF) solution.

8. The method of claim 7, wherein said hydrogen fluoride (HF) is provided in said second cleaning solution at a concentration of about 0.01 percent by weight to about 0.1 percent by weight.

9. The method of claim 1, further comprising:

rinsing the structure; and

drying the structure.

10. The method of claim 1, wherein cleaning with a first cleaning solution comprises a dipping process, a spray process, a spin process, a drying process using isopropyl alcohol vapor, or a combination thereof.

11. The method of claim 1, wherein cleaning with a second cleaning solution comprises:

a dipping process, a spray process, a spin process, a drying process using isopropyl alcohol vapor, or a combination thereof.

12. A method of manufacturing a semiconductor device, comprising:

forming an insulation layer and a conductive layer on a semiconductor substrate;

forming a gate pattern, said gate pattern comprising a metal, by sequentially etching the conductive layer and the insulation layer, the gate pattern comprising an insulation layer pattern and a conductive layer pattern;

cleaning said device with a first cleaning solution, said first cleaning solution comprising a mixture of ammonium hydroxide (NH₄OH), hydrogen peroxide (H₂O₂) and deionized (DI) water; and

cleaning said device with a second cleaning solution, said second cleaning solution comprising ozone (O₃) water or hydrogen fluoride (HF),

to thereby manufacture said semiconductor device.

13. The method of claim 12, wherein said gate pattern comprises tungsten silicide (WSi₂).

14. The method of claim 12, wherein the concentration of ozone (O₃) in the ozone (O₃) water is about 10 ppm to about 100 ppm.

15. The method of claim 12, wherein cleaning with a second cleaning solution is performed at a temperature in a range of about 0°

C. to about 50°

C.

16. The method of claim 12, wherein said second cleaning solution comprises an aqueous hydrogen fluoride (HF) solution.

17. The method of claim 16, wherein said hydrogen fluoride (HF) is provided in said second cleaning solution at a concentration of about 0.01 percent by weight to about 0.1 percent by weight.

18. The method of claim 12, further comprising:

forming an oxide layer on the semiconductor substrate and a sidewall of the gate pattern by reoxidizing after cleaning with the second cleaning solution.

19. The method of claim 18, wherein the reoxidation process is carried out by using plasma.

20. The method of claim 18, further comprising forming a spacer at the sidewall of the gate pattern after forming the oxide layer.