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FLAT PANEL DISPLAYS COMPRISING A THIN-FILM TRANSISTOR HAVING A SEMICONDUCTIVE OXIDE IN ITS CHANNEL AND METHODS OF FABRICATING THE SAME FOR USE IN FLAT PANEL DISPLAYS

  • US 20080128689A1
  • Filed: 11/29/2007
  • Published: 06/05/2008
  • Est. Priority Date: 11/29/2006
  • Status: Active Grant
First Claim
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1. A method of fabricating a display substrate having an array of semiconductive oxide thin-film transistors (TFTs), the method comprising:

  • forming gate wiring on an insulation substrate; and

    stacking a combination of a semiconductive oxide film pattern and data wiring on the gate wiring, wherein said stacking comprises selectively thinning the semiconductive oxide film pattern at channel portions thereof so that the semiconductive oxide film pattern is divided into first regions and correspondingly adjacent second regions, the first regions being substantially thinner than the second regions, and where the data wiring is operatively coupled to the thicker second regions, wherein a ratio of a thickness of a given first region to a thickness of its correspondingly adjacent second region is 0.123 or higher, but less than 1.

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