Three-dimensional integrated circuits with protection layers

  • US 20080142990A1
  • Filed: 12/19/2006
  • Published: 06/19/2008
  • Est. Priority Date: 12/19/2006
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • a first die comprising;

    a first substrate; and

    a first bonding pad over the first substrate;

    a second die having a first surface and a second surface opposite the first surface, wherein the second die is stacked on the first die; and

    a protection layer having a vertical portion on a sidewall of the second die, and a horizontal portion extending over the first die.

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