METHOD OF GROWING ELECTRICAL CONDUCTORS
First Claim
1. A method of depositing a noble metal oxide on a substrate in a reaction chamber by a plurality of atomic layer deposition (ALD) cycles, each cycle comprising:
- contacting the substrate with a vapor-phase pulse of a first noble metal source chemical, wherein the first source chemical adsorbs no more than one monolayer of a noble metal species on the substrate;
purging the reaction chamber of excess first source chemical;
contacting the substrate with a vapor-phase pulse of a second oxygen source chemical, wherein the second source chemical oxidizes the noble metal species on the substrate into a noble metal oxide; and
purging the reaction chamber of excess second source chemical.
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Abstract
A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a reducing agent, thereby forming a seed layer. In one arrangement, the reducing agent comprises one or more organic compounds that contain at least one functional group selected from the group consisting of —OH, —CHO, and —COOH. In another arrangement, the reducing agent comprises an electric current.
169 Citations
29 Claims
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1. A method of depositing a noble metal oxide on a substrate in a reaction chamber by a plurality of atomic layer deposition (ALD) cycles, each cycle comprising:
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contacting the substrate with a vapor-phase pulse of a first noble metal source chemical, wherein the first source chemical adsorbs no more than one monolayer of a noble metal species on the substrate; purging the reaction chamber of excess first source chemical; contacting the substrate with a vapor-phase pulse of a second oxygen source chemical, wherein the second source chemical oxidizes the noble metal species on the substrate into a noble metal oxide; and purging the reaction chamber of excess second source chemical. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method of depositing ruthenium oxide on a substrate in a reaction chamber by an atomic layer deposition process comprising:
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providing a pulse of a ruthenium halide into the reaction chamber; purging the reaction chamber of excess ruthenium halide; providing a pulse of a reducing agent into the reaction chamber; purging the reaction chamber of excess reducing agent; providing a pulse of an oxygen source into the reaction chamber; and purging the reaction chamber of excess oxygen source. - View Dependent Claims (22, 23, 24, 25, 26, 27)
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28. A method of depositing SrRuO3 by ALD comprising:
contacting a substrate with alternate vapor phase pulses of a Sr compound, a Ru compound and an oxygen compound. - View Dependent Claims (29)
Specification