Scaled-Down Phase Change Memory Cell in Recessed Heater
First Claim
1. A semiconductor structure configurable for use as a nonvolatile storage element, the semiconductor structure comprising:
- a first electrode;
an insulating layer formed on at least a portion of an upper surface of the first electrode;
a pillar traversing the insulating layer and being recessed relative to an upper surface of the insulating layer, the pillar comprising a heater formed on at least a portion of the upper surface of the first electrode and a collar formed on sidewalls of the insulating layer proximate the heater and on at least a portion of an upper surface of the heater;
a phase change material layer formed on at least a portion of the upper surface of the insulating layer and substantially filling a volume defined by the upper surface of the heater and at least a portion of an upper surface of the collar; and
at least a second electrode formed on at least a portion of an upper surface of the phase change material layer.
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Accused Products
Abstract
A semiconductor structure configurable for use as a nonvolatile storage element includes a first electrode, an insulating layer formed on at least a portion of an upper surface of the first electrode, and a pillar traversing the insulating layer and being recessed relative to an upper surface of the insulating layer. The pillar includes a heater formed on at least a portion of the upper surface of the first electrode and a collar formed on sidewalls of the insulating layer proximate the heater and on at least a portion of an upper surface of the heater. The structure further includes a PCM layer formed on at least a portion of the upper surface of the insulating layer and substantially filling a volume defined by the upper surface of the heater and at least a portion of an upper surface of the collar. A second electrode is formed on at least a portion of an upper surface of the phase change material layer.
66 Citations
20 Claims
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1. A semiconductor structure configurable for use as a nonvolatile storage element, the semiconductor structure comprising:
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a first electrode; an insulating layer formed on at least a portion of an upper surface of the first electrode; a pillar traversing the insulating layer and being recessed relative to an upper surface of the insulating layer, the pillar comprising a heater formed on at least a portion of the upper surface of the first electrode and a collar formed on sidewalls of the insulating layer proximate the heater and on at least a portion of an upper surface of the heater; a phase change material layer formed on at least a portion of the upper surface of the insulating layer and substantially filling a volume defined by the upper surface of the heater and at least a portion of an upper surface of the collar; and at least a second electrode formed on at least a portion of an upper surface of the phase change material layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An integrated circuit including at least one semiconductor structure, the at least one semiconductor structure comprising:
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a first electrode; an insulating layer formed on at least a portion of an upper surface of the first electrode; a pillar traversing the insulating layer and being recessed relative to an upper surface of the insulating layer, the pillar comprising a heater formed on at least a portion of the upper surface of the first electrode and a collar formed on sidewalls of the insulating layer proximate the heater and on at least a portion of an upper surface of the heater; a phase change material layer formed on at least a portion of the upper surface of the insulating layer and substantially filling a volume defined by the upper surface of the heater and at least a portion of an upper surface of the collar; and at least a second electrode formed on at least a portion of an upper surface of the phase change material layer.
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11. A memory circuit, comprising:
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a plurality of nonvolatile memory cells; and a plurality of bit lines and word lines operatively coupled to the memory cells for selectively accessing one or more of the memory cells; wherein at least a given one of the memory cells comprises; a first electrode; an insulating layer formed on at least a portion of an upper surface of the first electrode; a pillar traversing the insulating layer and being recessed relative to an upper surface of the insulating layer, the pillar comprising a heater formed on at least a portion of the upper surface of the first electrode and a collar formed on sidewalls of the insulating layer proximate the heater and on at least a portion of an upper surface of the heater; a phase change material layer formed on at least a portion of the upper surface of the insulating layer and substantially filling a volume defined by the upper surface of the heater and at least a portion of an upper surface of the collar; and at least a second electrode formed on at least a portion of an upper surface of the phase change material layer. - View Dependent Claims (12, 13, 14, 15)
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16. A method of forming a semiconductor structure configurable for use as a nonvolatile storage element, the method comprising the steps of:
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forming a first electrode; forming an insulating layer on at least a portion of an upper surface of the first electrode; forming a pillar traversing the insulating layer and being recessed relative to an upper surface of the insulating layer, the pillar comprising a heater formed on at least a portion of the upper surface of the first electrode and a collar formed on sidewalls of the insulating layer proximate the heater and on at least a portion of an upper surface of the heater; forming a phase change material layer on at least a portion of the upper surface of the insulating layer and substantially filling a volume defined by the upper surface of the heater and at least a portion of an upper surface of the collar; and forming at least a second electrode on at least a portion of an upper surface of the phase change material layer. - View Dependent Claims (17, 18, 19, 20)
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Specification