PLASMA PROCESS UNIFORMITY ACROSS A WAFER BY CONTROLLING RF PHASE BETWEEN OPPOSING ELECTRODES

  • US 20080180028A1
  • Filed: 04/11/2007
  • Published: 07/31/2008
  • Est. Priority Date: 01/30/2007
  • Status: Active Grant
First Claim
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1. A method of processing a workpiece in a plasma reactor chamber, comprising:

  • coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode;

    providing an edge ground return path; and

    adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.

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