Semiconductor device

• US 20080191959A1
• Filed: 02/06/2008
• Published: 08/14/2008
• Est. Priority Date: 02/09/2007
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koyama, Jun, Yamazaki, Shunpei
• Granted Patent: US 7,683,838 B2
• Time in Patent Office: Days
• US Class Current: 343/873
• CPC Class Codes: H01Q 1/2225 used in active tags, i.e. provided with its own power source or in passive tags, i.e. deriving power from RF signal
• CPC Class Codes: H01Q 1/2283 mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package

Abstract

An object is to provide a semiconductor device in which even in the case where a plurality of antennas are provided, there is no limitation on the layout of the antennas so that disconnection between an integrated circuit portion and the antenna and reduction in a communication distance from a communication device can be prevented. An integrated circuit portion which includes a thin film transistor is provided on a first surface of an insulating base. A first antenna is provided over the integrated circuit portion. A second antenna is provided over a second surface of the base. The first antenna is connected to the integrated circuit potion. The second antenna is connected to the integrated circuit portion through a through hole formed in the base. The first antenna and the second antenna overlap with the integrated circuit portion.

Claims

1. A semiconductor device comprising:

an integrated circuit portion over a first surface of an insulating base, the integrated circuit portion including a thin film transistor;

a first antenna over the integrated circuit portion; and

a second antenna on a second surface of the insulating base,

wherein the first antenna is electrically connected to the integrated circuit potion,

wherein the second antenna is electrically connected to the integrated circuit portion through a through hole formed in the insulating base, and

wherein the first antenna and the second antenna overlap with the integrated circuit portion.

6. The semiconductor device according to claim 1, wherein the first antenna and the second antenna receive different frequencies.

2. A semiconductor device comprising:

an integrated circuit portion over a first surface of an insulating base, the integrated circuit portion including a thin film transistor;

a first antenna over the integrated circuit portion; and

a second antenna over a substrate,

wherein the first antenna is electrically connected to the integrated circuit potion,

wherein the second antenna is electrically connected to the integrated circuit portion through a through hole formed in the insulating base, and

wherein the substrate adheres to the insulating base by an adhesive resin.

3. The semiconductor device according to claim 2, wherein an area of the integrated circuit portion is approximately equal to an area of the substrate.

7. The semiconductor device according to claim 2, wherein the first antenna and the second antenna receive different frequencies.

14. The semiconductor device according to claim 3, wherein the area of the integrated circuit portion is 9 to 400 mm².

4. A semiconductor device comprising:

a first integrated circuit portion and a second integrated circuit portion over a first surface of an insulating base, each of the first and second integrated circuit portions including a thin film transistor;

a first antenna over the first integrated circuit portion and the second integrated circuit portion; and

a second antenna on a second surface of the insulating base,

wherein the first antenna is electrically connected to the first integrated circuit potion,

wherein the second antenna is electrically connected to the second integrated circuit portion through a through hole formed in the insulating base, and

wherein the first antenna and the second antenna overlap with the first integrated circuit portion and the second integrated circuit portion.

5. The semiconductor device according to claim 4, wherein the first integrated circuit portion and the second integrated circuit portion each include a transmitting and receiving circuit portion.

8. The semiconductor device according to claim 4, wherein the first antenna and the second antenna receive different frequencies.

9. A semiconductor device comprising:

an integrated circuit portion over a first surface of an insulating base, the integrated circuit portion including a thin film transistor;

a first antenna over the integrated circuit portion;

a second antenna on a second surface of the insulating base; and

a third antenna over the first antenna,

wherein the first antenna is electrically connected to the integrated circuit potion and transmits and receives data through the third antenna,

wherein the second antenna is electrically connected to the integrated circuit portion through a through hole formed in the insulating base,

wherein the third antenna is a booster antenna which is insulated from the integrated circuit portion, and

wherein the first antenna, the second antenna, and the third antenna overlap with the integrated circuit portion.

12. The semiconductor device according to claim 9, wherein the second antenna and the third antenna receive different frequencies.

10. A semiconductor device comprising:

an integrated circuit portion over a first surface of an insulating base, the integrated circuit portion including a thin film transistor;

a first antenna over the integrated circuit portion;

a second antenna over the first substrate; and

a third antenna over the second substrate,

wherein the first substrate adheres to the insulating base by an adhesive resin.

wherein the second substrate adheres to an insulating film over the first antenna,

wherein the first antenna is electrically connected to the integrated circuit potion and transmits and receives data through the third antenna,

wherein the second antenna is electrically connected to the integrated circuit portion through a through hole formed in the insulating base, and

wherein the third antenna is a booster antenna which is insulated from the integrated circuit portion.

11. The semiconductor device according to claim 10, wherein the integrated circuit portion, the first substrate, and the second substrate have approximately equal areas.

13. The semiconductor device according to claim 10, wherein the second antenna and the third antenna receive different frequencies.

15. The semiconductor device according to claim 11, wherein the area of the integrated circuit portion is 9 to 400 mm².