Reduced edge effect from recesses in imagers
First Claim
1. A method of making a semiconductor imaging device, the method comprising:
- providing a substrate having an upper surface;
forming a recess into the upper surface of the substrate, the recess having a bottom and a sidewall;
forming a sidewall spacer on the sidewall of the recess; and
forming a color filter layer within the recess after forming the sidewall spacer.
8 Assignments
0 Petitions
Accused Products
Abstract
Methods for making a recessed color filter array for a semiconductor imager employing a sidewall spacer for reducing an edge effect from the array are disclosed. In one embodiment, a substrate is provided having an upper surface. Then, a recess is formed into the upper surface of the substrate. The recess has a bottom and a sidewall. Subsequently, a sidewall spacer is formed on the sidewall of the recess. A color resist is deposited into the recess after forming the sidewall spacer. In the embodiment, the sidewall spacer is formed of a material having a surface energy lower than that of a material defining the bottom of the recess. The color resist, when deposited into the recess, adheres less to the sidewall than to the bottom of the recess. Thus, the color resist does not conform to a shape of an edge portion of the recess where the sidewall and the bottom meet, thereby reducing the edge effect.
22 Citations
52 Claims
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1. A method of making a semiconductor imaging device, the method comprising:
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providing a substrate having an upper surface; forming a recess into the upper surface of the substrate, the recess having a bottom and a sidewall; forming a sidewall spacer on the sidewall of the recess; and forming a color filter layer within the recess after forming the sidewall spacer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A method of making a CMOS imager, the method comprising:
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providing a substrate having an upper surface and a recess formed into the upper surface, the recess having a bottom and a sidewall; forming a liner layer at least on the bottom of the recess, wherein the liner layer is formed of a first material having a first surface energy; and treating the sidewall of the recess so as to have a second surface energy lower than the first surface energy. - View Dependent Claims (28)
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29. A semiconductor imaging device comprising:
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a substrate having an upper surface, the substrate including a recess formed into the upper surface, the recess including a bottom and a sidewall; a sidewall spacer formed on the sidewall of the recess; and an array of color filters formed on the bottom of the recess. - View Dependent Claims (30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52)
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Specification