Light emitting device

• US 20080210961A1
• Filed: 05/11/2007
• Published: 09/04/2008
• Est. Priority Date: 03/07/2007
• Status: Active Grant

• Current Assignee: Lite-On Technology Corporation
• Original Assignee: Lite-On Technology Corporation
• Inventors: Lin, Yi-Shan, Tu, Kuan-Hsien
• Granted Patent: US 7,777,243 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Abstract

A light emitting device includes: a die-mounting base having a mounting surface; a light emitting diode mounted on the mounting surface of the die-mounting base and having a top surface facing in a normal direction normal to the mounting surface of the die-mounting base; a first wavelength-converting layer of a first wavelength-converting material formed on the mounting surface of the die-mounting base, enclosing the light emitting diode, and having a top surface; and a second wavelength-converting layer of a second wavelength-converting material formed on the top surface of the first wavelength-converting layer and having a top surface that is aligned with the top surface of the light emitting diode in the normal direction, and that has an area smaller than the top surface of the first wavelength-converting layer and not smaller than the top surface of the light emitting diode.

Claims

1. A light emitting device comprising:

a die-mounting base having a mounting surface;

a light emitting diode mounted on said mounting surface of said die-mounting base and having a top surface facing in a normal direction normal to said mounting surface of said die-mounting base;

a first wavelength-converting layer of a first wavelength-converting material formed on said mounting surface of said die-mounting base, enclosing said light emitting diode, and having a top surface; and

a second wavelength-converting layer of a second wavelength-converting material formed on said top surface of said first wavelength-converting layer and having a top surface that is aligned with said top surface of said light emitting diode in the normal direction, and that has an area smaller than said top surface of said first wavelength-converting layer and not smaller than said top surface of said light emitting diode.

2. The light emitting device of claim 1, wherein said die-mounting base defines a recess, said light emitting diode and said first and second wavelength-converting layers being disposed in said recess.

3. The light emitting device of claim 1, wherein each of said first and second wavelength-converting materials contains a transparent matrix and a particulate phosphor component dispersed in said transparent matrix.

4. The light emitting device of claim 3, wherein said transparent matrix is made from a material selected from the group consisting of silicone and epoxy resin.

5. The light emitting device of claim 3, wherein the concentration of said particulate phosphor component in said transparent matrix of said second wavelength-converting layer is higher than that of said first wavelength-converting layer.

6. The light emitting device of claim 3, wherein the concentration ratio of said particulate phosphor component in said transparent matrix of said second wavelength-converting layer to that of said first wavelength-converting layer is 1.1:

1.

7. The light emitting device of claim 1, wherein the area ratio of said top surface of said second wavelength-converting layer to said top surface of said light emitting diode ranges from 1:

1 to 4;

1.

8. The light emitting device of claim 7, wherein the area ratio of said top surface of said first wavelength-converting layer to said top surface of said second wavelength-converting layer is 3:

1.

9. The light emitting device of claim 1, wherein said second wavelength-converting layer has a central portion, a peripheral portion, and a layer thickness that is gradually decreased from said central portion toward said peripheral portion.

10. The light emitting device of claim 1, further comprising a protective layer covering said first and second wavelength-converting layers.

11. The light emitting device of claim 3, further comprising light-scattering particles dispersed in said transparent matrix.

12. The light emitting device of claim 11, wherein said light-scattering particles are made from a material selected from the group consisting of silicon dioxide, aluminum oxide, calcium oxide, and titanium dioxide.

13. The light emitting device of claim 1, wherein said light emitting diode is a blue light emitting diode.

14. The light emitting device of claim 1, wherein said light emitting diode is a UV light emitting diode.