Light emitting devices
3 Assignments
0 Petitions
Accused Products
Abstract
Light-emitting devices, and related components, systems and methods are disclosed.
23 Citations
61 Claims
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1. (canceled)
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2. A light emitting device comprising:
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a III-nitride semiconductor structure including an active region disposed between an n-type and a p-type region; and a photonic crystal structure formed in an n-type region, wherein the p-type region is substantially planar and the photonic crystal structure does not extend into the p-type region. - View Dependent Claims (3, 4, 5, 6, 7, 8)
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9. A light emitting device comprising:
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a first layer of first conductivity type; a first layer of second conductivity type; an active region disposed between a layer of first conductivity type and a layer of second conductivity type; a tunnel junction, the tunnel junction comprising;
a second layer of first conductivity type having a dopant concentration greater than the first layer of first conductivity type; anda second layer of second conductivity type having a dopant concentration greater than the first layer of second conductivity type; and
a third layer of first conductivity type,wherein a thickness of the third layer of first conductivity type varies periodically, wherein the tunnel junction is between the first layer of first conductivity type and the third layer of first conductivity type. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A method comprising:
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forming a first layer of first conductivity type; forming a first layer of second conductivity type; forming an active region between a layer of first conductivity type and a layer of second conductivity type; forming a tunnel junction, the tunnel junction comprising; a second layer of first conductivity type having a dopant concentration greater than the first layer of first conductivity type; and a second layer of second conductivity type having a dopant concentration greater than the first layer of second conductivity type; forming a third layer of first conductivity type; and forming a plurality of holes formed in the third layer of first conductivity type, wherein the tunnel junction is between the first layer of first conductivity type and the third layer of first conductivity type, the plurality of holes formed a lattice, and a lattice type, lattice constant, hole diameter, and hole depth are selected to create a predetermined radiation pattern.
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34. A light emitting device comprising:
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a III-nitride semiconductor structure including an active region disposed between a n-type and a p-type region; and a photonic crystal structure formed in an n-type region, the photonic crystal comprising a planar lattice of holes, each of the holes having a depth extending from a top opening to a bottom surface, wherein the top opening of the holes are located on a surface of the n-type region in which the photonic crystal structure is formed. - View Dependent Claims (35, 36, 37, 38, 39)
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40. A light emitting device comprising:
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a III-V semiconductor structure including a light-generating region disposed between an n-type region and a p-type region; and a surface of an n-type region having a dielectric function that varies spatially according to a pattern, wherein the pattern does not extend beyond the n-type region. - View Dependent Claims (42)
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41. A light emitting device comprising:
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a III-V semiconductor structure including a light-generating region disposed between an n-type region and a p-type region; and a photonic lattice formed in an n-type region, wherein the photonic lattice does not extend beyond the n-type region. - View Dependent Claims (43)
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44. A light emitting device comprising:
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a III-V semiconductor structure including a light-generating region disposed between an n-type region and a p-type region; and a surface of an n-type region having a dielectric function that varies spatially according to a pattern, wherein the pattern does not extend into the p-type region.
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45. A light emitting device comprising:
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a III-V semiconductor structure including a light-generating region disposed between an n-type region and a p-type region; and a photonic lattice formed in an n-type region, wherein the photonic lattice does not extend into the p-type region.
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46. A light emitting device comprising:
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a III-V semiconductor structure including a light-generating region disposed between an n-type region and a p-type region; and a surface of an n-type region having a dielectric function that varies spatially according to a pattern, wherein the p-type region is substantially planar and the pattern does not extend into the p-type region.
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47. A light emitting device comprising:
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a III-V semiconductor structure including a light-generating region disposed between an n-type region and a p-type region; and a photonic lattice formed in an n-type region, wherein the p-type region is substantially planar and the photonic lattice does not extend into the p-type region.
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48. A light emitting device comprising:
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a III-V semiconductor structure including a light-generating region disposed between an n-type region and a p-type region; and a surface of an n-type region having a dielectric function that varies spatially according to a pattern, wherein the pattern does not extend beyond the light-generating region. - View Dependent Claims (50)
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49. A light emitting device comprising:
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a III-V semiconductor structure including a light-generating region disposed between an n-type region and a p-type region; and a photonic lattice formed in an n-type region, wherein the photonic lattice does not extend beyond the light-generating region. - View Dependent Claims (51)
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52. A light emitting device comprising:
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a III-V semiconductor structure including a light-generating region disposed between an n-type region and a p-type region; and a photonic lattice formed in an n-type region, wherein the photonic lattice is formed of a pattern of holes extending from a surface of the n-type region. - View Dependent Claims (53, 54)
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55. A light emitting device comprising:
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a first layer of first conductivity type; a first layer of second conductivity type; a light-generating region disposed between a layer of first conductivity type and a layer of second conductivity type; a current spreading layer; and a third layer of first conductivity type, wherein a thickness of the third layer of first conductivity type varies periodically, wherein the current spreading layer is between the first layer of first conductivity type and the third layer of first conductivity type. - View Dependent Claims (56, 57)
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58. A light emitting device comprising:
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a first layer of first conductivity type; a first layer of second conductivity type; a light-generating region disposed between a layer of first conductivity type and a layer of second conductivity type; a current spreading layer; and a third layer of first conductivity type, wherein a plurality of holes extend from a surface of the third layer of first conductivity type and do not extend beyond the third layer of first conductivity type, wherein the current spreading layer is between the first layer of first conductivity type and the third layer of first conductivity type. - View Dependent Claims (59, 60)
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61. A method comprising:
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forming a first layer of first conductivity type; forming a first layer of second conductivity type; forming a light-generating region between a layer of first conductivity type and a layer of second conductivity type; a current spreading layer comprising a second layer of first conductivity type having a dopant concentration greater than the first layer of first conductivity type; forming a third layer of first conductivity type; and forming a plurality of holes in the third layer of first conductivity type, wherein the current spreading layer is between the first layer of first conductivity type and the third layer of first conductivity type, and the plurality of holes form a pattern.
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Specification