Manufacturing Method of Wiring and Storage Element

• US 20080220155A1
• Filed: 02/27/2008
• Published: 09/11/2008
• Est. Priority Date: 03/05/2007
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Harima, Noriko, Yoshizumi, Kensuke, Yamada, Tomoko
• Granted Patent: US 8,075,945 B2
• Time in Patent Office: Days
• US Class Current: 427/117
• CPC Class Codes: B81C 1/00095 Interconnects
• CPC Class Codes: B81C 2201/0184 Digital lithography, e.g. using an inkjet print-head
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 2203/013 Inkjet printing, e.g. for printing insulating material or resist using ink-jet printing to form a conductive pattern H05K3/125
• CPC Class Codes: H05K 2203/087 Using a reactive gas
• CPC Class Codes: H05K 3/125 by ink-jet printing
• CPC Class Codes: H05K 3/1283 After-treatment of the printed patterns, e.g. sintering or curing methods
• CPC Class Codes: H10K 71/611 using printing deposition, e.g. ink jet printing

Abstract

In a coating method, such as a droplet discharge method which requires baking, it is an object of the present invention to reduce the baking temperature at the time of forming a wiring and a conductive film. As a feature of the present invention, a composition, in which nanoparticles of a conductive material are dispersed in a solvent, is discharged using a droplet discharge method, and then dried to vaporize the solvent. Then, pretreatment using active oxygen is performed. After which, baking is then performed, whereby a wiring and a conductive film are formed. By performance of the pretreatment by active oxygen before the baking, a baking temperature at the time of forming the wiring and conductive film can be reduced.

Claims

1. A method for manufacturing a wiring comprising the steps of:

discharging a composition, in which nanoparticles of a conductive material are dispersed in a solvent, and drawing a wiring pattern;

drying the composition;

exposing the composition in which the solvent has been vaporized by the drying step, to active oxygen to perform pretreatment; and

performing baking after the step of exposing the composition to the active oxygen.

2. The method for manufacturing a wiring according to claim 1, wherein the active oxygen is generated by irradiation of ozone with an ultraviolet ray.

3. The method for manufacturing a wiring according to claim 2, wherein the ultraviolet irradiation is performed using at least one of a low-pressure mercury lamp and an excimer lamp.

4. The method for manufacturing a wiring according to claim 2, wherein the composition is also irradiated with the ultraviolet ray.

5. The method for manufacturing a wiring according to claim 2, wherein the ozone is generated by irradiation of oxygen with an ultraviolet ray having a 240 nm wavelength.

6. The method for manufacturing a wiring according to claim 2, wherein parts of the ozone and the active oxygen are generated by irradiation of oxygen with an ultraviolet ray having a wavelength of less than or equal to 175 nm.

7. The method for manufacturing a wiring according to claim 1, wherein a grain size of the nanoparticles is greater than or equal to 1 nm and less than or equal to 200 nm.

8. A method for manufacturing a wiring comprising the steps of:

discharging a composition in which nanoparticles of a conductive material are dispersed in a solvent;

drying the composition;

irradiating the composition in which the solvent has been vaporized by the drying step, with an ultraviolet ray under an ozone atmosphere; and

performing baking after the irradiating step.

9. The method for manufacturing a wiring according to claim 8, wherein the ultraviolet irradiation is performed using at least one of a low-pressure mercury lamp and an excimer lamp.

10. The method for manufacturing a wiring according to claim 8, wherein a grain size of the nanoparticles is greater than or equal to 1 nm and less than or equal to 200 nm.

11. A method for manufacturing a wiring comprising the steps of:

discharging a composition in which nanoparticles of a conductive material are dispersed in a solvent;

drying the composition;

irradiating the composition in which the solvent has been vaporized by the drying step, with an ultraviolet ray of less than or equal to 240 nm in air; and

performing baking after the irradiating step.

12. The method for manufacturing a wiring according to claim 11, wherein the ultraviolet irradiation is performed using at least one of a low-pressure mercury lamp and an excimer lamp.

13. The method for manufacturing a wiring according to claim 11, wherein a grain size of the nanoparticles is greater than or equal to 1 nm and less than or equal to 200 nm.

14. A method for manufacturing a wiring comprising the steps of:

discharging a composition in which nanoparticles of a conductive material are dispersed in a solvent;

drying the composition;

irradiating the composition in which the solvent has been vaporized by the drying step, with an ultraviolet ray of less than or equal to 175 nm in air; and

performing baking after the irradiating step.

15. The method for manufacturing a wiring according to claim 14, wherein the ultraviolet irradiation is performed using an excimer lamp.

16. The method for manufacturing a wiring according to claim 14, wherein a grain size of the nanoparticles is greater than or equal to 1 nm and less than or equal to 200 nm.

17. A method for manufacturing a storage element comprising the steps of:

forming a first conductive layer;

forming a memory layer over the first conductive layer;

discharging a composition, in which nanoparticles of a conductive material are dispersed in a solvent, over the memory layer;

drying the composition;

exposing the composition in which the solvent has been vaporized by the drying step, to active oxygen to perform pretreatment; and

performing baking, after the step of exposing the composition to the active oxygen, to form a second conductive layer.

18. The method for manufacturing a storage element according to claim 17, wherein the memory layer is an organic compound layer.

19. A method for manufacturing a storage element comprising the steps of:

forming a first conductive layer;

forming a memory layer over the first conductive layer;

discharging a composition, in which nanoparticles of a conductive material are dispersed in a solvent, over the memory layer;

drying the composition;

irradiating the composition in which the solvent has been vaporized by the drying step, with an ultraviolet ray under an ozone atmosphere; and

performing baking after the irradiating step to form a second conductive layer.

20. The method for manufacturing a storage element according to claim 19, wherein the memory layer is an organic compound layer.

21. A method for manufacturing a storage element comprising the steps of:

forming a first conductive layer;

forming a memory layer over the first conductive layer;

discharging a composition, in which nanoparticles of a conductive material are dispersed in a solvent, over the memory layer;

drying the composition;

irradiating the composition in which the solvent has been vaporized by the drying step, with an ultraviolet ray having a wavelength of less than or equal to 240 nm in air; and

performing baking after the irradiating step to form a second conductive layer.

22. The method for manufacturing a storage element according to claim 21, wherein the memory layer is an organic compound layer.

23. A method for manufacturing a storage element comprising the steps of:

forming a first conductive layer;

forming a memory layer over the first conductive layer;

discharging a composition, in which nanoparticles of a conductive material are dispersed in a solvent, over the memory layer;

drying the composition;

irradiating the composition in which the solvent has been vaporized by the drying step, with an ultraviolet ray having a wavelength of less than or equal to 175 nm in air; and

then

performing baking after the irradiating step to form a second conductive layer.

24. The method for manufacturing a storage element according to claim 23, wherein the memory layer is an organic compound layer.