PLASMA PROCESSING APPARATUS

  • US 20080236749A1
  • Filed: 03/27/2008
  • Published: 10/02/2008
  • Est. Priority Date: 03/28/2007
  • Status: Active Grant
First Claim
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1. A plasma processing apparatus comprising:

  • an evacuable processing chamber;

    a first electrode for supporting a target substrate in the processing chamber;

    a second electrode disposed to face the first electrode;

    a first high frequency power supply unit for applying a first high frequency power having a first frequency to either the first electrode or the second electrode;

    a processing gas supply unit for supplying a processing gas to a processing space formed between the first electrode and the second electrode;

    a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode;

    a focus ring attached to the first electrode to cover a peripheral portion of the main surface of the first electrode positioned in an outer side of the substrate mounting portion; and

    a peripheral dielectric member provided in the peripheral portion of the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than an electrostatic capacitance per unit area applied between the first electrode and the substrate by the main dielectric member.

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