SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20080251807A1
• Filed: 04/15/2008
• Published: 10/16/2008
• Est. Priority Date: 04/16/2007
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Yoon, Ho Sang
• Granted Patent: US 7,791,094 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate

Abstract

Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate, and a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer.

Claims

1. A semiconductor light emitting device comprising:

a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate; and

a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer.

2. The semiconductor light emitting device as claimed in claim 1, wherein the concave-convex patterns in the backside of the substrate are aligned in a transverse direction or a longitudinal direction.

3. The semiconductor light emitting device as claimed in claim 1, wherein a concave pattern or a convex pattern in the backside of the substrate comprises at least one of a polygonal shape, a horn-shape or a hemisphere shape.

4. The semiconductor light emitting device as claimed in claim 1, wherein the concave-convex patterns in the backside of the substrate comprises a linear shape, an oval shape or a rhombus shape.

5. The semiconductor light emitting device as claimed in claim 1, wherein a concave pattern, which is aligned at a center area of the backside of the substrate, comprises a width larger than a width of a concave pattern aligned at both side areas of the center area.

6. The semiconductor light emitting device as claimed in claim 1, wherein a concave pattern, which is aligned at a center area of the backside of the substrate, comprises a width which becomes gradually narrower toward a side area.

7. The semiconductor light emitting device as claimed in claim 5, wherein the center area comprises an area that is equal to or less than a ⅓

radius of the substrate.

8. The semiconductor light emitting device as claimed in claim 1, wherein the substrate comprises at least one selected from the group consisting of sapphire (Al₂O₃), GaN, SiC, ZnO, GaP, GaAs and Si,

the concave patterns in the backside of the substrate comprise a depth of about 0.1 to 10 μ

m.

9. The semiconductor light emitting device as claimed in claim 1, wherein at least one of the concave patterns, which are aligned at a center area of the backside of the substrate, comprises a width larger than a width of a concave pattern at an other area of the substrate by 1.5 to 2.5 times.

10. The semiconductor light emitting device as claimed in claim 1, wherein at least one of concave patterns, which are aligned at a center area of the backside of the substrate, comprises a depth deeper than a depth of a concave pattern at an other area of the substrate.

11. The semiconductor light emitting device as claimed in claim 1, wherein the first conductive semiconductor layer comprises an N-type semiconductor layer or a P-type semiconductor layer.

12. The semiconductor light emitting device as claimed in claim 1, wherein at least one of a buffer layer and an undoped semiconductor layer is formed between the first conductive semiconductor layer and the substrate.

13. The semiconductor light emitting device as claimed in claim 1, wherein an N-type semiconductor layer is formed on the second conductive semiconductor layer.

14. A semiconductor light emitting device comprising:

a substrate comprising concave-convex patterns in a backside and a top-side of the substrate; and

a light emitting structure on the substrate and comprising at least one of an N-type semiconductor layer, an active layer and a P-type semiconductor layer.

15. The semiconductor light emitting device as claimed in claim 14, wherein the concave-convex patterns aligned in the backside of the substrate comprises an alignment direction and/or an interval different from an alignment direction and/or an interval of the concave-convex patterns aligned in the top-side of the substrate.

16. The semiconductor light emitting device as claimed in claim 14, wherein a concave pattern, which is formed at a center area defined along of the backside or the top-side of the substrate, comprises a width larger than a width of a concave pattern at an other area of the substrate.

17. A method for manufacturing a semiconductor light emitting device, the method comprising the steps of:

forming concave-convex patterns in at least a portion of a backside of a substrate; and

forming a light emitting structure comprising an active layer on the substrate.

18. The method as claimed in claim 17, wherein a concave pattern aligned at a center area of the backside of the substrate comprises a width larger than a width of a concave pattern formed at an other area of the substrate to compensate for temperature difference in various areas of the substrate.

19. The method as claimed in claim 17, wherein concave-convex patterns are in a top-side of the substrate.

20. The method as claimed in claim 17, wherein, when the active layer is formed, the concave-convex pattern in the backside of the substrate allows the substrate to have a curvature of 0.