Semiconductor Device

• US 20080254569A1
• Filed: 10/11/2007
• Published: 10/16/2008
• Est. Priority Date: 03/12/2004
• Status: Active Grant

• Current Assignee: Gregory S. Herman, Peter P. Mardilovich, Randy L. Hoffman
• Original Assignee: Gregory S. Herman, Peter P. Mardilovich, Randy L. Hoffman
• Inventors: Hoffman, Randy L., Herman, Gregory S., Mardilovich, Peter P.
• Granted Patent: US 7,732,251 B2
• Time in Patent Office: Days
• US Class Current: 438/104
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: Y10T 408/5633 Adapted to coaxially grip round work

Abstract

One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium.

Claims

1-16. -16. (canceled)

17. A method of forming a channel, comprising:

providing at least one precursor composition that includes one or more precursor compounds that include;

zinc-gallium oxide, cadmium-gallium oxide, and cadmium-indium oxide; and

depositing the channel including the precursor composition to form a multicomponent oxide from the precursor composition to electrically couple a drain electrode and a source electrode.

18. The method of claim 17, wherein the precursor composition includes a liquid form.

19. The method of claim 18, wherein depositing the channel includes an ink-jet deposition technique when the precursor composition includes the liquid form.

20. The method of claim 17, wherein the precursor composition includes one or more precursor compounds that include A_x, one or more precursor compounds that include B_x, and one or more precursor compounds that include C_x, wherein each A is selected from the group of Zn, Cd, each B is selected from the group Ga, In, each C is selected from the group of Zn, Cd, Ga, In, each x is independently a non-zero integer, and wherein each of A, B, and C are different.

21. The method of claim 20, wherein the one or more precursor compounds includes one or more precursor compounds that include D_x, wherein D is selected from the group of Zn, Cd, Ga, In, each x is independently a non-zero integer, and wherein each of A, B, C, and D are different.

22. The method of claim 17, wherein depositing the channel includes depositing one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.

23. The method of claim 17, wherein depositing a channel includes step for vaporizing the precursor composition to form a vaporized precursor composition, and depositing the vaporized precursor composition using a physical vapor deposition technique including one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, ion beam sputtering.

24. The method of claim 17, including providing a substrate or substrate assembly;

and

forming the semiconductor device on the substrate or substrate assembly.

25. A method of manufacturing a semiconductor device, comprising:

providing a drain electrode;

providing a source electrode;

step for providing at least one precursor composition that includes one or more precursor compounds of zinc oxide, cadmium oxide, gallium oxide, indium oxide, zinc-gallium oxide, cadmium-gallium oxide, and cadmium-indium oxide;

step for depositing a channel including depositing the precursor composition to form a multicomponent oxide from the precursor composition contacting the drain electrode and the source electrode;

providing a gate electrode; and

providing a gate dielectric positioned between the gate electrode and the channel.

26. The method of claim 25, wherein providing the source, the drain, and the gate electrodes includes providing a substantially transparent form of the source, the drain, and the gate electrodes.

27. The method of claim 25, wherein the precursor composition includes one or more precursor compounds that include A_x, one or more precursor compounds that include B_x, and one or more precursor compounds that include C_x, wherein each A is selected from the group of Zn, Cd, each B is selected from the group Ga, In, each C is selected from the group of Zn, Cd, Ga, In, each x is independently a non-zero integer, and wherein each of A, B, and C are different.

28. The method of claim 27, wherein the one or more precursor compounds includes one or more precursor compounds that include D_x, wherein D is selected from the group of Zn, Cd, Ga, In, each x is independently a non-zero integer, and wherein each of A, B, C, and D are different.

29. The method of claim 25, wherein the step for depositing a channel includes an ink-jet deposition technique.

30. The method of claim 25, including providing a substrate or substrate assembly;

and

forming the semiconductor device on the substrate or substrate assembly.

31-46. -46. (canceled)