Tuning capacitance to enhance FET stack voltage withstand

  • US 20080265978A1
  • Filed: 04/26/2007
  • Published: 10/30/2008
  • Est. Priority Date: 04/26/2007
  • Status: Active Grant
First Claim
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1. A stacked transistor RF switch apparatus, comprising:

  • a) a transistor stack having a multiplicity of constituent transistors all coupled in series connection drain to source to form a series string for which internal nodes are those between adjacent transistors; and

    b) a total effective drain-source capacitance Cds for each constituent transistor, wherein values of Cds for two constituent transistors differ from each other by at least 2%.

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