Heat exchange enhancement

• US 20080283403A1
• Filed: 06/13/2008
• Published: 11/20/2008
• Est. Priority Date: 03/31/2006
• Status: Abandoned Application

• Current Assignee: Hong Kong Applied Science And Technology Research Institute Co., Ltd.
• Original Assignee: Hong Kong Applied Science And Technology Research Institute Co., Ltd.
• Inventors: Shuy, Geoffrey Wen-Tai
• Application Number:
  US12/138,839
• Publication Number:
  US 20080283403A1
• Time in Patent Office: Days
• US Class Current: 205/80
• CPC Class Codes: B60Q 1/20 Fog lights
• CPC Class Codes: F21S 43/14 Light emitting diodes [LED]
• CPC Class Codes: F21S 45/48 with means for conducting heat from the inside to the outside of the lighting devices, e.g. with fins on the outer surface of the lighting device
• CPC Class Codes: F21V 29/51 using condensation or evaporation of a fluid, e.g. heat pipes
• CPC Class Codes: F21V 29/71 using a combination of separate elements interconnected by heat-conducting means, e.g. with heat pipes or thermally conductive bars between separate heat-sink elements
• CPC Class Codes: F21V 29/83 the elements having apertures, ducts or channels, e.g. heat radiation holes
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]
• CPC Class Codes: F28D 15/0233 the conduits having a particular shape, e.g. non-circular cross-section, annular F28D15/0241, F28D15/0266 take precedence
• CPC Class Codes: F28D 15/0266 with separate evaporating and condensing chambers connected by at least one conduit; Loop-type heat pipes; with multiple or common evaporating or condensing chambers F28D15/043 takes precedence
• CPC Class Codes: F28F 13/185 Heat-exchange surfaces provided with microstructures or with porous coatings
• CPC Class Codes: F28F 21/04 of ceramic; of concrete; of natural stone
• CPC Class Codes: H01L 23/3731 Ceramic materials or glass H01L23/3732, H01L23/3733, H01L23/3735, H01L23/3737, H01L23/3738 take precedence
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 7/20427 having radiation enhancing surface treatment, e.g. black coating
• CPC Class Codes: Y10T 428/2495 Thickness [relative or absolute]
• CPC Class Codes: Y10T 428/265 1 mil or less

Abstract

A heat exchange device that includes a structural section and a thin layer of material attached to a surface of the structural section. The thin layer of material has a thickness less than 100 microns. The combination of the structural section and the thin layer of material has a higher thermal transfer coefficient than the structural section alone, the thermal transfer coefficient representing an ability to exchange thermal energy with an ambient gas.

Claims

1-38. -38. (canceled)

39. A method comprising:

forming a thin layer of material on a substrate, wherein the thin layer of material has a thickness less than 100 microns, and the combination of the thin layer and the substrate can exchange thermal energy with an ambient gas faster than the substrate without the thin layer.

40. The method of claim 39 wherein forming the thin layer of material on the substrate comprises forming a first sub-layer and a second sub-layer, the first sub-layer being impermeable to the ambient gas, the second sub-layer being at least partially permeable to the ambient gas.

41. The method of claim 39 wherein forming the thin layer of material comprises forming spikes having heights less than 250 nanometers and diameters less than 1 micron on the surface of the thin layer.

42. The method of claim 39 wherein forming the thin layer of material on the substrate comprises a plating process.

43. The method of claim 39 wherein the plating process comprises using an electrolyte comprising at least one of aluminum oxide, aluminum nitride, aluminum carbide, beryllium oxide, beryllium nitride, beryllium carbide, boron oxide, carbon, lithium oxide, lithium nitride, lithium carbide, magnesium oxide, magnesium nitride, magnesium carbide, silicon carbide, silicon oxide, silicon nitride, titanium carbide, titanium oxide, titanium nitride, zinc carbide, zinc oxide, zinc nitride, zirconium carbide, zirconium nitride, and zirconium oxide.

44. A method comprising:

forming a thin layer of ceramic material on a substrate, the thin layer of ceramic material having a thickness less than 100 microns, the thin layer of ceramic material comprising spikes each having a diameter less than 1 micron at mid-height.

45. The method of claim 44 wherein forming the thin layer of material on the substrate comprises forming a first sub-layer and a second sub-layer, the first sub-layer being impermeable to the ambient gas, the second sub-layer being at least partially permeable to the ambient gas.