METHOD FOR MAKING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS OBTAINED BY THE METHOD, METHOD FOR MAKING THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR SUBSTRATE OBTAINED BY THE METHOD, AND METHOD FOR MAKING DISPLAY APPARATUS AND DISPLAY APPARATUS OBTAINED BY THE METHOD

• US 20080283842A1
• Filed: 05/15/2008
• Published: 11/20/2008
• Est. Priority Date: 05/18/2007
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Hayashi, Naoki, Arai, Toshiaki
• Granted Patent: US 7,955,916 B2
• Time in Patent Office: Days
• US Class Current: 257/72
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

A method for making a semiconductor apparatus including the steps of: forming a laminate structure of an insulating film made of a metal oxide and a semiconductor thin film on a substrate; forming a light absorption layer on top of the laminate structure; and irradiating an energy beam of a wavelength capable of being absorbed by the light absorption layer on the light absorption layer and simultaneously crystallizing the insulating film and the semiconductor thin film by means of heat generated in the light absorption layer.

Claims

1. A method for making a semiconductor apparatus comprising the steps of:

forming a laminate structure of an insulating film made of a metal oxide and a semiconductor thin film on a substrate;

forming a light absorption layer on top of said laminate structure; and

irradiating an energy beam of a wavelength capable of being absorbed by said light absorption layer on said light absorption layer and simultaneously crystallizing said insulating film and said semiconductor thin film by means of heat generated in said light absorption layer.

2. The method according to claim 1, wherein in the step of forming said laminate structure, said insulating film and said semiconductor thin film are formed in this order so as to cover a gate electrode formed on said substrate.

3. The method according to claim 2, wherein said energy beam is irradiated partly on said gate electrode.

4. The method according to claim 1, wherein

in the step of forming said laminate structure, said semiconductor thin film and said insulating film are formed in this order, and

in the step of forming said light absorption layer, a gate electrode film is formed on said insulating film as a light absorption layer.

5. The method according to claim 4, wherein said energy beam is irradiated on part of said gate electrode formed of said gate electrode film.

6. A semiconductor apparatus comprising a substrate and a laminate structure formed on said substrate and included of an insulating film made of a metal oxide and a semiconductor thin film, wherein

said insulating film and said semiconductor thin film are both crystallized.

7. The semiconductor apparatus according to claim 6, wherein said insulating film and said semiconductor thin film have at least fine crystallinity, respectively.

8. The semiconductor apparatus according to claim 6, wherein

said insulating film is used as a gate insulating film, and

a portion superposed with said gate electrode has crystallinity higher than the other portions.

9. The semiconductor apparatus according to claim 6, wherein

said insulating film is used as a gate insulating film laminated with a silicon-based insulating film, and

said silicon-based insulating film, said insulating film made of the metal oxide, and said semiconductor thin film are laminated on said substrate in this order so as to cover a gate electrode formed on said substrate.

10. A method for making a thin film transistor substrate comprising the steps of:

forming, on a substrate, a laminate structure of a gate insulating film made of a metal oxide and a semiconductor thin film;

forming a light absorption layer on top of said laminate structure; and

irradiating said light absorption layer with an energy beam of a wavelength capable of being absorbed by said light absorption layer to simultaneously crystallize said gate insulating film and said semiconductor thin film by means of heat generated in said light absorption layer.

11. A thin film transistor substrate comprising, on a substrate, a laminate structure of a gate insulating film made of a metal oxide and a semiconductor thin film, wherein said gate insulating film and said semiconductor thin film are both crystallized.

12. A method for making a display apparatus, wherein a thin film transistor and a pixel electrode connected are formed on a substrate, the method comprising the steps of:

forming said thin film transistor;

forming a laminate structure of a gate insulating film made of a metal oxide and a semiconductor thin film on said substrate;

forming a light absorption layer on top of said laminate structure; and

irradiating said light absorption layer with an energy beam of a wavelength capable of being absorbed by said light absorption layer to simultaneously crystallize said gate insulating film and said semiconductor thin film by means of heat generated in said light absorption layer.

13. A display apparatus of a type, a thin film transistor and a pixel electrode connected being provided on a substrate, wherein

a laminate structure of a gate insulating film made of a metal oxide and a semiconductor thin film is provided on the substrate, and

said gate insulating film and said semiconductor thin film is crystallized, respectively.