SEMICONDUCTOR DEVICE

• US 20080296782A1
• Filed: 06/04/2007
• Published: 12/04/2008
• Est. Priority Date: 06/04/2007
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Mahler, Joachim, Fischer, Rupert, Rakow, Bernd, Otremba, Ralf, Engl, Reimund
• Granted Patent: US 7,868,465 B2
• Time in Patent Office: Days
• US Class Current: 257/783
• CPC Class Codes: H01L 2224/03505 Sintering
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/2612 Auxiliary members for layer connectors, e.g. spacers
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29339 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/29344 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/29347 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/29355 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/83192 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83205 Ultrasonic bonding
• CPC Class Codes: H01L 2224/8381 involving forming an intermetallic compound at the bonding interface
• CPC Class Codes: H01L 2224/83825 Solid-liquid interdiffusion
• CPC Class Codes: H01L 2224/8385 : using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/85 : using a wire connector
• CPC Class Codes: H01L 2224/85205 : Ultrasonic bonding
• CPC Class Codes: H01L 2224/92 : Specific sequence of method steps
• CPC Class Codes: H01L 2224/92247 : the second connecting process involving a wire connector
• CPC Class Codes: H01L 23/49513 : having bonding material between chip and die pad
• CPC Class Codes: H01L 23/49575 : Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 23/49586 : Insulating layers on lead frames
• CPC Class Codes: H01L 24/27 : Manufacturing methods
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15738 : the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/1576 : Iron [Fe] as principal constituent
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

A semiconductor device is disclosed. One embodiment provides a device including a carrier, an electrically insulating layer applied onto the carrier, an adhesive layer applied to the electrically insulating layer. A first semiconductor chip applied to the adhesive layer.

Claims

1. A device comprising:

a carrier;

an electrically insulating layer applied onto the carrier;

an adhesive layer applied to the electrically insulating layer; and

a first semiconductor chip applied to the adhesive layer.

2. The device of claim 1, wherein the electrically insulating layer comprises a material from a group consisting of a metal oxide, a silicon oxide, a diamond-like carbon, an imide, a ceramic, glass, or a polymer.

3. The device of claim 1, comprising wherein the adhesive layer is electrically insulating and thermally conducting.

4. The device of claim 1, comprising wherein a surface area of the electrically insulating layer is larger than a surface area of the adhesive layer.

5. The device of claim 1, comprising wherein the electrically insulating layer covers at least partly a first surface and a second surface of the carrier.

6. The device of claim 1, comprising wherein the carrier is electrically conducting.

7. The device of claim 1, comprising wherein a second semiconductor chip is applied to the carrier and is electrically connected to the carrier.

8. The device of claim 7, comprising wherein the second semiconductor chip has a first contact element on a first main surface and a second contact element on a second main surface.

9. The device of claim 7, comprising wherein the second semiconductor chip is a power semiconductor.

10. The device of claim 7, comprising wherein the first semiconductor chip controls the second semiconductor chip.

11. The device of claim 1, comprising wherein a molding compound adheres to the electrically insulating layer.

12. A device comprising:

a carrier;

a first electrically insulating layer applied to the carrier;

a second electrically insulating layer applied to the first electrically insulating layer;

a first adhesive layer applied to the second electrically insulating layer; and

a first semiconductor chip applied to first adhesive layer.

13. The device of claim 12, comprising wherein a first intermediate layer is arranged between the first electrically insulating layer and the second electrically insulating layer.

14. The device of claim 13, comprising wherein the first intermediate layer is electrically conducting.

15. The device of claim 12, comprising wherein the first electrically insulating layer and/or the second electrically insulating layer comprise at least one material from a group consisting of metal oxides, silicon oxides, diamond-like carbon, imides, ceramics, glass, or polymers.

16. The device of claim 12, comprising wherein a second semiconductor chip is applied to the carrier and is electrically connected to the carrier.

17. A method comprising:

placing a first semiconductor chip on a carrier;

after placing the first semiconductor chip on the carrier, depositing an electrically insulating layer on the carrier; and

placing a second semiconductor chip on the electrically insulating layer.

18. The method of claim 17, comprising depositing the electrically insulating layer galvanically.

19. The method of claim 17,comprising applying a first voltage between the first semiconductor chip and the carrier while depositing the electrically insulating layer on the carrier.

20. The method of claim 17, comprising applying a second voltage to a contact element of the first semiconductor chip while depositing the electrically insulating layer on the carrier in order to prevent the contact element to be coated with the electrically insulating layer.

21. The method of claim 17, comprising depositing a molding compound on the electrically insulating layer.

22. The method of claim 17, wherein the electrically insulating layer comprises at least one material from a group consisting of a metal oxide, a silicon oxide, a diamond-like carbon, an imide, a ceramic, glass, or a polymer.

23. A method comprising:

depositing a plurality of particles on a carrier;

forming an electrically insulating layer by heating the particles; and

placing a first semiconductor chip on the electrically insulating layer.

24. The method of claim 23, comprising dispersing the particles in a liquid when deposited on the carrier.

25. The method of claim 24, comprising wherein the liquid evaporates prior to the formation of the electrically insulating layer.

26. The method of claim 23, comprising coating the particles with an organic material.

27. The method of claim 23, comprising coating a first number of the particles with an organic material and not coating a second number of the particles with the organic material.

28. The method of claim 27, comprising wherein the organic material evaporates prior to the formation of the electrically insulating layer.

29. The method of claim 23, comprising forming wherein the electrically insulating layer by sintering or melting the particles.

30. The method of claim 23, comprising wherein the dimensions of the particles are smaller than 100 nm.

31. The method of claim 23, comprising depositing wherein the particles on the carrier by using an ink jet method.