Method of Integration of a MIM Capacitor with a Lower Plate of Metal Gate Material Formed on an STI Region or a Silicide Region Formed in or on the Surface of a Doped Well with a High K Dielectric Material

  • US 20090004809A1
  • Filed: 01/08/2008
  • Published: 01/01/2009
  • Est. Priority Date: 09/12/2005
  • Status: Active Grant
First Claim
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1-20. -20. (canceled)

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