Coating method utilizing phosphor containment structure and devices fabricated using same
First Claim
1. A method for fabricating a semiconductor devices, comprising:
- providing a plurality of semiconductor devices on a substrate;
forming a contact on at least some of said semiconductor devices;
forming a containment structure on at least some of said semiconductor devices having said contact, each said containment structure defining a deposition area excluding its said contact; and
depositing a coating material within said deposition area, said coating material not covering said contact.
3 Assignments
0 Petitions
Accused Products
Abstract
Methods for fabricating a semiconductor devices, and in particular light emitting diodes (LEDS) comprising providing a plurality of semiconductor devices on a substrate and forming a contact on at least some of the semiconductor devices. A containment structure is formed on at least some of the semiconductor devices having a contact with each containment structure defining a deposition area excluding the contact. A coating material is deposited then within the deposition area, with the coating material not covering the contact. A light emitting diode (LED) chip wafer comprising a plurality of LEDs on a substrate wafer with at least some of the LEDs having a contact. A plurality of containment structures are included, each of which is associated with a respective one of the plurality of LEDs. Each of the containment structures at least partially on its respective one of the LEDs and defining a deposition area on its respective one of the LEDs. The deposition area excludes the contact. A coating is included in each of the deposition areas.
161 Citations
59 Claims
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1. A method for fabricating a semiconductor devices, comprising:
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providing a plurality of semiconductor devices on a substrate; forming a contact on at least some of said semiconductor devices; forming a containment structure on at least some of said semiconductor devices having said contact, each said containment structure defining a deposition area excluding its said contact; and depositing a coating material within said deposition area, said coating material not covering said contact. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A light emitting diode (LED) chip wafer, comprising:
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a plurality of LEDs on a substrate wafer, at least some of said LEDs comprising a contact; a plurality of containment structures, each of which is associated with a respective one of said plurality of LEDs, each of said containment structures at least partially on its respective one of said LEDs and defining a deposition area on its respective one of said LEDs, excluding said contact; and a coating in each said deposition area and not on said contact. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51)
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52. An light emitting diode (LED) chip, comprising:
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an LED; a contact on said LED; containment structure associated with said LED of LEDs, said containment structure at least partially on said LED and defining a deposition area on said LED excluding said contact; and a coating in said deposition area and on the surface of said LED. - View Dependent Claims (53, 54, 55, 56, 57, 58)
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59. A method for fabricating wafer level LED chips, comprising:
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providing a plurality of LEDs on a substrate; forming a contact on at least some of said LEDs; depositing a mask layer over at least some of said LEDs having forming a contact, said mask layer covering said contact; shaping a containment structure from said mask layer, said containment structure defining a deposition area, said contact outside said deposition area; depositing a coating material within said deposition area, said coating material not covering said contact; and forming an opening through said mask layer to each said contact.
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Specification