Method of manufacturing high power light-emitting device package and structure thereof
First Claim
1. A structure of a high power light-emitting device package, comprising:
- a lead frame having a heat-dissipating element and a plurality of leads, and each of the leads outwardly extended from one side of the heat-dissipating element;
an electroplating layer formed on an outer surface of the lead frame;
a conductive gel layer coated on a surface of the heat-dissipating element;
at least one light-emitting chip disposed on the conductive gel layer so that one bottom electrode of the at least one light-emitting chip electrically connected with the surface of the heat-dissipating element;
an encapsulant covered on a portion of the heat-dissipating element and a portion of the leads each, a reflector cup integrally formed on the encapsulant and a reflective surface formed on an inner side wall thereof, and the at least one light-emitting chip exposed on a bottom of the reflector cup;
a solder wire electrically connected with one top electrode of the at least one light-emitting chip to one of the leads;
a silver epoxy layer formed on a connection of the solder wire and the one top electrode of the at least one light-emitting chip, and on a connection of the solder wire and the one of the leads;
a silicon gel layer formed inside the reflector cup for covering at least one light-emitting chip and the solder wire; and
a lens disposed on a top of the reflector cup and connected with the silicon gel layer, whereby forming a high power light-emitting device package.
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Accused Products
Abstract
A method of manufacturing high power light-emitting device packages and structure thereof, wherein the method thereof includes the steps of: (a) forming a plurality of lead frames, each of the lead frames includes a heat-dissipating element and a plurality of leads; (b) electroplating an outer surface of the lead frames each; (c) coating conductive gel on a surface of the heat-dissipatings each; (d) arranging at least one light-emitting chip on the conductive gel; (e) forming an encapsulant on each of the lead frames; (f) connecting at least one top electrode of the light-emitting chip with one of the leads; (g) coating silicon gel for covering the at one light-emitting chip, and forming integrally a focusing light convex surface on a top surface of the silicon gel; and (h) cutting off the tie-bars to separate the lead frames from one another, whereby forming a plurality of high power light-emitting device packages.
13 Citations
10 Claims
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1. A structure of a high power light-emitting device package, comprising:
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a lead frame having a heat-dissipating element and a plurality of leads, and each of the leads outwardly extended from one side of the heat-dissipating element; an electroplating layer formed on an outer surface of the lead frame; a conductive gel layer coated on a surface of the heat-dissipating element; at least one light-emitting chip disposed on the conductive gel layer so that one bottom electrode of the at least one light-emitting chip electrically connected with the surface of the heat-dissipating element; an encapsulant covered on a portion of the heat-dissipating element and a portion of the leads each, a reflector cup integrally formed on the encapsulant and a reflective surface formed on an inner side wall thereof, and the at least one light-emitting chip exposed on a bottom of the reflector cup; a solder wire electrically connected with one top electrode of the at least one light-emitting chip to one of the leads; a silver epoxy layer formed on a connection of the solder wire and the one top electrode of the at least one light-emitting chip, and on a connection of the solder wire and the one of the leads; a silicon gel layer formed inside the reflector cup for covering at least one light-emitting chip and the solder wire; and a lens disposed on a top of the reflector cup and connected with the silicon gel layer, whereby forming a high power light-emitting device package. - View Dependent Claims (2)
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3. A structure of a high power light-emitting device package, comprising:
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a lead frame having a heat-dissipating element and a plurality of leads, and each of the leads outwardly extended from one side of the heat-dissipating element; an electroplating layer formed on an outer surface of the lead frame; a conductive gel layer coated on a surface of the heat-dissipating element; at least one light-emitting chip disposed on the conductive gel layer so that one bottom electrode of the at least one light-emitting chip electrically connected with the surface of the heat-dissipating element; an encapsulant covered on a portion of the heat-dissipating element and a portion of the leads each, a reflector cup integrally formed on the encapsulant and a reflective surface formed on an inner side wall thereof, and the at least one light-emitting chip exposed on a bottom of the reflector cup; a solder wire electrically connected with one top electrode of the at least one light-emitting chip to one of the leads; a silver epoxy layer formed on a connection of the solder wire and the one top electrode of the at least one light-emitting chip, and on a connection of the solder wire and the one of the leads; and a silicon gel layer formed inside the reflector cup for covering at least one light-emitting chip and the solder wire, whereby forming a high power light-emitting device package. - View Dependent Claims (4, 5)
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6. A structure of a high power light-emitting device package, comprising:
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a lead frame having a heat-dissipating element and a plurality of leads, and each of the leads outwardly extended from one side of the heat-dissipating element; an encapsulant covered on a portion of the heat-dissipating element and a portion of the leads each, a reflector cup integrally formed on the encapsulant and a reflective surface formed on an inner side wall thereof, and a partial surface of the heat-dissipating element and a partial surface of the leads each exposed on a bottom of the reflector cups each; an electroplating layer formed on an outer surface of the lead frames each uncovered by the encapsulant; a conductive gel layer coated on the bottom of the reflector cup; at least one light-emitting chip disposed on the conductive gel layer so that one bottom electrode of the at least one light-emitting chip electrically connected with a surface of the heat-dissipating element; a solder wire electrically connected with one top electrode of the at least one light-emitting chip to one of the leads; a silver epoxy layer formed on a connection of the solder wire and the one top electrodes of the at least one light-emitting chip, and on a connection of the solder wire and the one of the leads; a silicon gel layer formed inside the reflector cup for covering at least one light-emitting chip and the solder wire; and a lens disposed on a top of the reflector cup and connected with the silicon gel layer, whereby forming a high power light-emitting device package. - View Dependent Claims (7)
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8. A structure of a high power light-emitting device package, comprising:
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a lead frame having a heat-dissipating element and a plurality of leads, and each of the leads outwardly extended from one side of the heat-dissipating element; an encapsulant covered on a portion of the heat-dissipating element and a portion of the leads each, a reflector cup integrally formed on the encapsulant and a reflective surface formed on an inner side wall thereof, and a partial surface of the heat-dissipating element and a partial surface of the leads each exposed on a bottom of the reflector cups each; an electroplating layer formed on an outer surface of the lead frames each uncovered by the encapsulant; a conductive gel layer coated on the bottom of the reflector cup; at least one light-emitting chip disposed on the conductive gel layer so that one bottom electrode of the at least one light-emitting chip electrically connected with a surface of the heat-dissipating element; a solder wire electrically connected with one top electrode of the at least one light-emitting chip to one of the leads; a silver epoxy layer formed on a connection of the solder wire and the one top electrode of the at least one light-emitting chip, and on a connection of the solder wire and the one of the leads; and a silicon gel layer formed inside the reflector cup for covering at least one light-emitting chip and the solder wire. - View Dependent Claims (9, 10)
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Specification