Method of manufacturing high power light-emitting device package and structure thereof

• US 20090014745A1
• Filed: 09/11/2008
• Published: 01/15/2009
• Est. Priority Date: 09/21/2006
• Status: Abandoned Application

• Current Assignee: Bily Wang, Jonnie Chuang, Shih-Yu Wu
• Original Assignee: Bily Wang, Jonnie Chuang, Shih-Yu Wu
• Inventors: Wang, Bily, Chuang, Jonnie, Wu, Shih-Yu
• Application Number:
  US12/232,114
• Publication Number:
  US 20090014745A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/642 characterized by the shape
• CPC Class Codes: H01L 33/647 the elements conducting electric current to or from the semiconductor body

Abstract

A method of manufacturing high power light-emitting device packages and structure thereof, wherein the method thereof includes the steps of: (a) forming a plurality of lead frames, each of the lead frames includes a heat-dissipating element and a plurality of leads; (b) electroplating an outer surface of the lead frames each; (c) coating conductive gel on a surface of the heat-dissipatings each; (d) arranging at least one light-emitting chip on the conductive gel; (e) forming an encapsulant on each of the lead frames; (f) connecting at least one top electrode of the light-emitting chip with one of the leads; (g) coating silicon gel for covering the at one light-emitting chip, and forming integrally a focusing light convex surface on a top surface of the silicon gel; and (h) cutting off the tie-bars to separate the lead frames from one another, whereby forming a plurality of high power light-emitting device packages.

Claims

1. A structure of a high power light-emitting device package, comprising:

a lead frame having a heat-dissipating element and a plurality of leads, and each of the leads outwardly extended from one side of the heat-dissipating element;

an electroplating layer formed on an outer surface of the lead frame;

a conductive gel layer coated on a surface of the heat-dissipating element;

at least one light-emitting chip disposed on the conductive gel layer so that one bottom electrode of the at least one light-emitting chip electrically connected with the surface of the heat-dissipating element;

an encapsulant covered on a portion of the heat-dissipating element and a portion of the leads each, a reflector cup integrally formed on the encapsulant and a reflective surface formed on an inner side wall thereof, and the at least one light-emitting chip exposed on a bottom of the reflector cup;

a solder wire electrically connected with one top electrode of the at least one light-emitting chip to one of the leads;

a silver epoxy layer formed on a connection of the solder wire and the one top electrode of the at least one light-emitting chip, and on a connection of the solder wire and the one of the leads;

a silicon gel layer formed inside the reflector cup for covering at least one light-emitting chip and the solder wire; and

a lens disposed on a top of the reflector cup and connected with the silicon gel layer, whereby forming a high power light-emitting device package.

2. The structure of the high power light-emitting device package as claimed in claim 1, further comprising a reflective layer formed on the reflective surface.

3. A structure of a high power light-emitting device package, comprising:

a lead frame having a heat-dissipating element and a plurality of leads, and each of the leads outwardly extended from one side of the heat-dissipating element;

an electroplating layer formed on an outer surface of the lead frame;

a conductive gel layer coated on a surface of the heat-dissipating element;

at least one light-emitting chip disposed on the conductive gel layer so that one bottom electrode of the at least one light-emitting chip electrically connected with the surface of the heat-dissipating element;

an encapsulant covered on a portion of the heat-dissipating element and a portion of the leads each, a reflector cup integrally formed on the encapsulant and a reflective surface formed on an inner side wall thereof, and the at least one light-emitting chip exposed on a bottom of the reflector cup;

a solder wire electrically connected with one top electrode of the at least one light-emitting chip to one of the leads;

a silver epoxy layer formed on a connection of the solder wire and the one top electrode of the at least one light-emitting chip, and on a connection of the solder wire and the one of the leads; and

a silicon gel layer formed inside the reflector cup for covering at least one light-emitting chip and the solder wire, whereby forming a high power light-emitting device package.

4. The structure of the high power light-emitting device package as claimed in claim 3, further comprising a reflective layer formed on the reflective surface.

5. The structure of the high power light-emitting device package as claimed in claim 3, wherein a focusing light convex surface further integrally formed on a top surface of the silicon gel layer.

6. A structure of a high power light-emitting device package, comprising:

a lead frame having a heat-dissipating element and a plurality of leads, and each of the leads outwardly extended from one side of the heat-dissipating element;

an encapsulant covered on a portion of the heat-dissipating element and a portion of the leads each, a reflector cup integrally formed on the encapsulant and a reflective surface formed on an inner side wall thereof, and a partial surface of the heat-dissipating element and a partial surface of the leads each exposed on a bottom of the reflector cups each;

an electroplating layer formed on an outer surface of the lead frames each uncovered by the encapsulant;

a conductive gel layer coated on the bottom of the reflector cup;

at least one light-emitting chip disposed on the conductive gel layer so that one bottom electrode of the at least one light-emitting chip electrically connected with a surface of the heat-dissipating element;

a solder wire electrically connected with one top electrode of the at least one light-emitting chip to one of the leads;

a silver epoxy layer formed on a connection of the solder wire and the one top electrodes of the at least one light-emitting chip, and on a connection of the solder wire and the one of the leads;

a silicon gel layer formed inside the reflector cup for covering at least one light-emitting chip and the solder wire; and

a lens disposed on a top of the reflector cup and connected with the silicon gel layer, whereby forming a high power light-emitting device package.

7. The structure of the high power light-emitting device package as claimed in claim 6, further comprising a reflective layer formed on the reflective surface.

8. A structure of a high power light-emitting device package, comprising:

a lead frame having a heat-dissipating element and a plurality of leads, and each of the leads outwardly extended from one side of the heat-dissipating element;

an encapsulant covered on a portion of the heat-dissipating element and a portion of the leads each, a reflector cup integrally formed on the encapsulant and a reflective surface formed on an inner side wall thereof, and a partial surface of the heat-dissipating element and a partial surface of the leads each exposed on a bottom of the reflector cups each;

an electroplating layer formed on an outer surface of the lead frames each uncovered by the encapsulant;

a conductive gel layer coated on the bottom of the reflector cup;

at least one light-emitting chip disposed on the conductive gel layer so that one bottom electrode of the at least one light-emitting chip electrically connected with a surface of the heat-dissipating element;

a solder wire electrically connected with one top electrode of the at least one light-emitting chip to one of the leads;

a silver epoxy layer formed on a connection of the solder wire and the one top electrode of the at least one light-emitting chip, and on a connection of the solder wire and the one of the leads; and

a silicon gel layer formed inside the reflector cup for covering at least one light-emitting chip and the solder wire.

9. The structure of the high power light-emitting device package as claimed in claim 8, further comprising a reflective layer formed on the reflective surface.

10. The structure of the high power light-emitting device package as claimed in claim 8, wherein a focusing light convex surface further integrally formed on a top surface of the silicon gel layer.