Semiconductor Light Emitting Element

  • US 20090026468A1
  • Filed: 02/22/2007
  • Published: 01/29/2009
  • Est. Priority Date: 02/28/2006
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting element comprising:

  • a substrate;

    a p-type semiconductor layer supported by the substrate;

    an n-type semiconductor layer provided at a position farther from the substrate than the p-type semiconductor layer is; and

    an active layer provided between the p-type semiconductor layer and the n-type semiconductor layer;

    the n-type semiconductor layer being provided with a rectangular n-side electrode whose width in one direction is equal to that of the n-type semiconductor layer,the n-type semiconductor layer having a thickness t that satisfies Formula 1 given below,the semiconductor light emitting element including a side surface extending in a lamination direction and being formed with a plurality of projections,the projections having bottom widths an average WA of which satisfies WA

    λ

    /n when a wavelength of light emitted from the active layer is λ and

    index of refraction of one of the n-type semiconductor layer and the p-type semiconductor layer is n,wherein Formula 1 is;

    t

    ρ





    J 0

    e
    4



    γ





    κ

    B


    T
    ·

    W


    ( L - W )
    where L is width of the n-type semiconductor layer in a direction which is different from said one direction, T is absolute temperature, W is width of the n-side electrode in a direction which is different from said one direction, J0 is current density at a contact portion between the n-side electrode and the n-type semiconductor layer, e is elementary charge, γ

    is diode ideality factor, κ

    B is Boltzmann constant, and ρ

    is specific resistance of the n-type semiconductor layer.

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