Oxide thin film transistor and method of manufacturing the same

  • US 20090057663A1
  • Filed: 03/19/2008
  • Published: 03/05/2009
  • Est. Priority Date: 08/29/2007
  • Status: Active Grant
First Claim
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1. An oxide thin film transistor (TFT) comprising:

  • a gate;

    a channel formed to correspond to the gate, and a capping layer having a higher work function than the channel;

    a gate insulator disposed between the gate and the channel; and

    a source and drain respectively contacting either side of the capping layer and the channel and partially on a top surface of the capping layer.

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