SEMICONDUCTOR DEVICE HAVING AN ELEVATED SOURCE/DRAIN STRUCTURE OF VARYING CROSS-SECTION

  • US 20090072324A1
  • Filed: 11/17/2008
  • Published: 03/19/2009
  • Est. Priority Date: 04/25/2005
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • (1) an oxide film provided in a predetermined position on a semiconductor silicon substrate;

    (2) gate wiring provided on the semiconductor silicon substrate; and

    (3) at least one structure (hereinafter, referred to as a “

    elevated source/drain structure”

    ) selected from the group consisting of an elevated source structure that is provided in a predetermined position defined by the oxide film and the gate wiring on the semiconductor silicon substrate and that is brought into contact with a side wall of the gate wiring, and a drain protrusion structure that is provided in a predetermined position defined by the oxide film and the gate wiring on the semiconductor silicon substrate and that is brought into contact with a side wall of the gate wiring,wherein an orthographic projection image of a shape of an upper end portion of the elevated source/drain structure on the semiconductor silicon substrate along the direction normal to the semiconductor silicon substrate is substantially in agreement with a predetermined shape defined by the oxide film and the gate wiring on the semiconductor silicon substrate, and at least one of orthographic projection images of cross-sections taken along planes parallel with the semiconductor silicon substrate of the elevated source/drain structure on the semiconductor silicon substrate along the direction normal to the semiconductor silicon substrate is larger than the predetermined shape defined by the oxide film and the gate wiring on the semiconductor silicon substrate.

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