Inspection System, Inspection Method, and Method for Manufacturing Semiconductor Device
0 Assignments
0 Petitions
Accused Products
Abstract
The present invention provides an inspection system of ID chips that can supply a signal or power supply voltage to an ID chip without contact, and can increase throughput of an inspection process and an inspection method using the inspection system. The inspection system according to the present invention includes a plurality of inspection electrodes, a plurality of inspection antennas, a position control unit, a unit for applying voltage to each of the inspection antennas, and a unit for measuring potentials of the inspection electrodes. One feature of the inspection system is that a plurality of ID chips and the plurality of inspection electrodes are overlapped with a certain space therebetween, and the plurality of ID chips and the plurality of inspection antennas are overlapped with a certain space therebetween, and the plurality of ID chips are interposed between the plurality of inspection electrodes and the plurality of inspection antennas by the position control unit.
18 Citations
54 Claims
-
1-40. -40. (canceled)
-
41. A method for manufacturing a semiconductor device comprising:
-
forming a first thin film transistor and a second thin film transistor over a substrate; forming a first antenna on the first thin film transistor and a second antenna on the second thin film transistor; supplying a signal or power supply voltage to the first and second antennae without contact with the first and second antennae; moving an inspection electrode with an arbitrary portion or a whole portion of the first antenna overlapped with the inspection electrode with a space therebetween and with an arbitrary portion or a whole antenna of the second antenna overlapped with the inspection electrode with a space therebetween; conducting an inspection for grasping a first operating state of the first thin film transistor and the first antenna from a first voltage of the inspection electrode and a first position of the inspection electrode to the first antenna, and a second operating state of the second thin film transistor and the second antenna from a second voltage of the inspection electrode and a second position of the inspection electrode to the second antenna; separating the substrate from the first and second transistors and the first and second antennae; and attaching the first and second transistors and the first and second antennae to a support medium. - View Dependent Claims (43, 45, 47, 49, 51, 53)
-
-
42. A method for manufacturing a semiconductor device comprising:
-
forming a first thin film transistor and a second thin film transistor over a substrate; forming a first antenna on the first thin film transistor and a second antenna on a second thin film transistor; supplying a signal or power supply voltage to the first and second antennae without contact with the first and second antennae; moving a first inspection electrode with an arbitrary portion or a whole portion of the first antenna overlapped with the inspection electrode with a space therebetween and an arbitrary portion or a whole portion of the second antenna overlapped with the inspection electrode with a space therebetween, and a second inspection electrode with an arbitrary portion or a whole portion of the first antenna overlapped with the second inspection electrode with a space therebetween and an arbitrary portion or a whole portion of the second antenna overlapped with the second inspection electrode with a space therebetween; conducting an inspection for grasping a first operating state of the first thin film transistor and the first antenna from a first voltage of the first inspection electrode and a first position of the first inspection electrode to the first antenna, a second operating state of the second thin film transistor and the second antenna from a second voltage of the first inspection electrode and a second position of the first inspection electrode to the second antenna, a third operating state of the first thin film transistor and the first antenna from a third voltage of a second inspection electrode and a third position of the second inspection electrode to the first antenna, a fourth operating state of the second thin film transistor and the second antenna from a fourth voltage of the second inspection electrode and a fourth position of the second inspection electrode to the second antenna, separating the substrate from the first and second transistors and the first and second antennae; and attaching the first and second transistors and the first and second antennae to a support medium. - View Dependent Claims (44, 46, 48, 50, 52, 54)
-
Specification