Complementary metal oxide semiconductor device and method of manufacturing the same

  • US 20090095981A1
  • Filed: 03/04/2008
  • Published: 04/16/2009
  • Est. Priority Date: 10/16/2007
  • Status: Abandoned Application
First Claim
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1. A complementary metal oxide semiconductor (CMOS) device, comprising:

  • an epi-layer on a substrate;

    a first semiconductor layer and a second semiconductor layer on different regions of the epi-layer;

    a PMOS transistor on the first semiconductor layer; and

    a NMOS transistor on the second semiconductor layer.

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