Method of Producing a Thin Semiconductor Chip

• US 20090098684A1
• Filed: 10/07/2008
• Published: 04/16/2009
• Est. Priority Date: 04/21/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Mohamed, Abdul Rahman, Koller, Adolf, Kroeninger, Werner, Kotek, Manfred
• Granted Patent: US 7,863,104 B2
• Time in Patent Office: Days
• US Class Current: 438/114
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/68331 of passive members, e.g. die mounting substrate

Abstract

A method of fabricating a semiconductor chip includes the providing an adhesive layer on the outer area of the active surface of a device wafer and attaching a rigid body to the active surface by the adhesive layer. The device wafer is thinned by treating the passive surface of the device wafer. A first backing tape is connected to the passive surface of the device wafer. The outer portion of the rigid body is separated from the central portion of the rigid body and the outer portion of the device wafer is separated from the central portion of the device wafer. The central portion of the rigid body, the outer portion of the device wafer and the outer portion of the rigid body are removed from the first backing tape. The device wafer may be diced into semiconductor chips.

Claims

1. A method of fabricating a semiconductor chip, the method comprising:

providing an adhesive layer on the outer area of an active surface of a device wafer;

bonding a rigid body to the active surface of the device wafer by the adhesive layer;

thinning the device wafer by treating a passive surface of the device wafer that is opposite to the active surface;

bonding a first backing tape to the passive surface of the device wafer;

separating an outer portion of the rigid body from a central portion of the rigid body and separating an outer portion of the device wafer from a central portion of the device wafer;

removing the central portion of the rigid body from the first backing tape;

removing the outer portion of the device wafer and the outer portion of the rigid body from the first backing tape; and

dicing the device wafer into semiconductor chips.

2. The method of claim 1, further comprising:

weakening the bonding at an outer portion of the first backing tape disposed below the outer portion of the device wafer by irradiating the outer portion of the first backing tape with ultraviolet light, before removing the outer portion of the device wafer and the outer portion of the rigid body from the first backing tape, the first backing tape comprising an adhesive that weakens when irradiated with ultraviolet light.

3. The method of claim 1, further comprising:

weakening the bonding at an outer portion of the first backing tape disposed below the outer portion of the device wafer by heating the outer portion of the first backing tape, before removing the outer portion of the device wafer and the outer portion of the rigid body from the first backing tape, the first backing tape comprising an adhesive that weakens when heated.

4. The method of claim 1, further comprising:

omitting an adhesive at the outer portion of the first backing tape disposed below the outer portion of the device wafer, before bonding the first backing tape to the passive surface of the device wafer.

5. The method of claim 1, further comprising:

bonding a second backing tape below the first backing tape, before bonding the first backing tape to the passive surface of the device wafer.

6. The method of claim 5, further comprising:

removing a central portion of the first backing tape, before bonding the first backing tape to the passive surface of the device wafer.

7. The method of claim 6, further comprising:

cutting a first trench in the first backing tape before removing the outer portion of the device wafer and the outer portion of the rigid body from the first backing tape, the first trench encircling the device wafer.

8. The method of claim 7, further comprising:

cutting a second trench in the first backing tape prior to removing the outer portion of the device wafer and the outer portion of the rigid body, the first trench encircling the second trench.

9. The method of claim 7, further comprising:

removing the strip of the first backing tape that is disposed between the first and second trenches with removal of the outer portion of the device wafer and the outer portion of the rigid body.

10. The method of claim 9, further comprising:

weakening the bonding at an outer portion of the second backing tape disposed below the strip of the first backing tape by irradiating the outer portion of the second backing tape with ultraviolet light, before removing the outer portion of the device wafer and the outer portion of the rigid body from the first backing tape, the second backing tape comprising an adhesive that weakens when irradiated with ultraviolet light.

11. The method of claim 9, further comprising:

weakening the bonding at an outer portion of the second backing tape disposed below the strip of the first backing tape by heating the outer portion of the second backing tape, before removing the outer portion of the device wafer and the outer portion of the rigid body from the first backing tape, the second backing tape comprising an adhesive that weakens when heated.

12. The method of claim 9, further comprising:

omitting an adhesive at an outer portion of the second backing tape disposed below the strip of the first backing tape before bonding the first backing tape to the passive surface of the device wafer.

13. The method of claim 7, further comprising:

removing the strip of the first backing tape that is disposed between the first trench and the hollow center with removal of the outer portion of the device wafer and the outer portion of the rigid body.

14. The method of claim 13, further comprising:

weakening the bonding at an outer portion of the second backing tape disposed below the strip of the first backing tape by irradiating the outer portion of the second backing tape with ultraviolet light, before removing the outer portion of the device wafer and the outer portion of the rigid body from the first backing tape, the second backing tape comprising an adhesive that weakens when irradiated with ultraviolet light.

15. The method of claim 13, further comprising:

weakening the bonding at an outer portion of the second backing tape disposed below the strip of the first backing tape by heating the outer portion of the second backing tape, before removing the outer portion of the device wafer and the outer portion of the rigid body from the first backing tape, the second backing tape comprising an adhesive that weakens when heated.

16. The method of claim 13, further comprising:

omitting an adhesive at an outer portion of the second backing tape disposed below the strip of the first backing tape, before bonding the first backing tape to the passive surface of the device wafer.

17. The method of claim 5, further comprising:

cutting a first trench in the first backing tape before removing the outer portion of the device wafer and the outer portion of the rigid body from the first backing tape, the first trench encircling the device wafer.

18. The method of claim 17, further comprising:

cutting a second trench in the first backing tape prior to removing the outer portion of the device wafer and the outer portion of the rigid body, the first trench encircling the second trench.

19. The method of claim 17, further comprising:

removing the strip of the first backing tape that is disposed between the first and second trenches with removal of the outer portion of the device wafer and the outer portion of the rigid body.

20. The method of claim 19, further comprising:

weakening the bonding at an outer portion of the second backing tape disposed below the strip of the first backing tape by irradiating the outer portion of the second backing tape with ultraviolet light, before removing the outer portion of the device wafer and the outer portion of the rigid body from the first backing tape, the second backing tape comprising an adhesive that weakens when irradiated with ultraviolet light.

21. The method of claim 19, further comprising:

weakening the bonding at an outer portion of the second backing tape disposed below the strip of the first backing tape by heating the outer portion of the second backing tape, before removing the outer portion of the device wafer and the outer portion of the rigid body from the first backing tape, the second backing tape comprising an adhesive that weakens when heated.

22. The method of claim 19, further comprising:

omitting an adhesive at an outer portion of the second backing tape disposed below the strip of the first backing tape, before bonding the first backing tape to the passive surface of the device wafer.

23. The method of claim 17, wherein (g) further comprises:

removing the strip of the first backing tape that is disposed between the first trench and the hollow center with removal of the outer portion of the device wafer and the outer portion of the rigid body.

24. The method of claim 23, further comprising:

weakening the bonding at an outer portion of the second backing tape disposed below the strip of the first backing tape by irradiating the outer portion of the second backing tape with ultraviolet light, before removing the outer portion of the device wafer and the outer portion of the rigid body from the first backing tape, the second backing tape comprising an adhesive that weakens when irradiated with ultraviolet light.

25. The method of claim 23, further comprising:

weakening the bonding at an outer portion of the second backing tape disposed below the strip of the first backing tape by heating the outer portion of the second backing tape, before removing the outer portion of the device wafer and the outer portion of the rigid body from the first backing tape, the second backing tape comprising an adhesive that weakens when heated.

26. The method of claim 23, further comprising:

omitting an adhesive at an outer portion of the second backing tape disposed below the strip of the first backing tape, before bonding the first backing tape to the passive surface of the device wafer.