Protective Film Structure of Metal Member, Metal Component Employing Protective Film Structure, and Equipment for Producing Semiconductor or Flat-Plate Display Employing Protective Film Structure

• US 20090142588A1
• Filed: 06/16/2006
• Published: 06/04/2009
• Est. Priority Date: 06/17/2005
• Status: Active Grant

• Current Assignee: NGK Spark PLUG Company Limited, Tohoku University National Universities Corporation
• Original Assignee: Mitsubishi Chemical Corporation (Mitsubishi Chemical Group Corp.), Nihon Ceratec Co., Ltd. (NGK Spark PLUG Company Limited), Tohoku University National Universities Corporation
• Inventors: Ohmi, Tadahiro, Ishikawa, Makoto, Mizutani, Fumikazu, Kawase, Yasuhiro, Kitano, Masafumi, Shirai, Yasuyuki, Morinaga, Hitoshi, Kishi, Yukio
• Granted Patent: US 8,124,240 B2
• Time in Patent Office: Days
• US Class Current: 428/336
• CPC Class Codes: C23C 28/00 Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
• CPC Class Codes: C23C 28/042 including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
• CPC Class Codes: C23C 4/02 Pretreatment of the material to be coated, e.g. for coating on selected surface areas
• CPC Class Codes: C23C 8/80 After-treatment
• CPC Class Codes: C25D 11/02 Anodisation
• CPC Class Codes: C25D 11/04 of aluminium or alloys based thereon
• CPC Class Codes: C25D 11/08 containing inorganic acids
• CPC Class Codes: C25D 11/10 containing organic acids
• CPC Class Codes: C25D 11/16 Pretreatment , e.g. desmutting
• CPC Class Codes: C25D 11/18 After-treatment, e.g. pore-sealing
• CPC Class Codes: Y10T 428/26 Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
• CPC Class Codes: Y10T 428/265 1 mil or less
• CPC Class Codes: Y10T 428/31678 Of metal

Abstract

Multifunction production equipment enabling a plurality of processes in which deposition of reaction products on the inner wall of the processing chamber of equipment for producing a semiconductor or a flat-plate display, metal contamination due to corrosion of the inner wall, or the like, and fluctuation of the process due to discharged gas are suppressed, and a protective film structure for use therein. On the surface of a metal material, a first coating layer having an oxide coating of 1μ thick or less formed as an underlying layer by direct oxidation of a parent material, and a second coating layer of about 200 μm thick are formed. With such an arrangement, corrosion resistance against irradiation with ions or radicals can be imparted to a second layer protective film, and the effect of a protective layer for preventing corrosion of the surface of parent metal caused by diffusing molecules or ions into the second layer protective film can be imparted to the first layer oxide film. Consequently, contamination of the substrate with metals generated from each metal member and the inner surface of the process chamber is reduced, and stripping of the second layer protective film due to lowering in adhesion of the second layer protective film due to corrosion of the interface between the parent material and the second layer protective film can be suppressed.

Claims

1. A protective film structure of a metal member for use in an apparatus for manufacturing a semiconductor or the like, said protective film structure comprising a first coating layer having an oxide coating film formed by direct oxidation of a base-material metal and a second coating layer made of a material different from that of the first coating layer.

2. A protective film structure of a metal member according to claim 1, wherein a surface of said base-material metal is blasted before forming said first coating layer.

3. A protective film structure of a metal member according to claim 1, wherein said first coating layer is the oxide coating film formed by thermal oxidation of the metal.

4. A protective film structure of a metal member according to claim 1, wherein said first coating layer is the oxide coating film formed by anodic oxidation using an electrolyte solution in the form of an organic anodization solution of pH 4 to pH 10.

5. A protective film structure of a metal member according to claim 1, wherein said first coating layer is the oxide coating film formed by anodic oxidation using an electrolyte solution in the form of an inorganic anodization solution of pH 4 to pH 10.

6. A protective film structure of a metal member according to any one of claims 1 to 5, wherein said first coating layer has a thickness of 1 micrometer or less.

7. A protective film structure of a metal member according to any one of claims 1 to 5, wherein said second coating layer is a coating film formed of one of aluminum oxide, yttrium oxide, magnesium oxide, and a mixed crystal thereof by a plasma spraying method.

8. A protective film structure of a metal member according to claim 7, wherein said second coating layer is about 200 micrometers.

9. A protective film structure of a metal member according to any one of claims 1 to 5, wherein said second coating layer is a coating film in the form of at least one of a NiP plating, a Ni plating, and a Cr plating.

10. A protective film structure of a metal member according to any one of claims 1 to 5, wherein said second coating layer is a fluororesin coating film formed by fluororesin coating.

11. A gas supply shower head for a semiconductor or flat panel display manufacturing apparatus, using the protective film structure of the metal member according to claim 1.

12. A metal component for a semiconductor or flat panel display manufacturing apparatus, using the protective film structure of the metal member according to claim 1.

13. A semiconductor or flat panel display manufacturing apparatus using the protective film structure of the metal member according to claim 1.

14. A semiconductor or flat panel display manufacturing apparatus using the protective film structure of the metal member according to claim 1 for an inner wall of a process chamber.