ELECTRONIC DEVICE, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. An active matrix liquid crystal display device comprising:
- a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode;
a gate insulating film formed over the gate electrode; and
a semiconductor film comprising a metal oxide wherein the metal includes In;
an insulating film formed on the semiconductor film; and
a pixel electrode formed on the insulating film and electrically connected to the thin film transistor,wherein the insulating film is formed from a material solution.
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Accused Products
Abstract
The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging. One feature of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-like semiconductor layer and overlap it.
3964 Citations
12 Claims
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1. An active matrix liquid crystal display device comprising:
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a thin film transistor formed over a substrate, the thin film transistor comprising; a gate electrode; a gate insulating film formed over the gate electrode; and a semiconductor film comprising a metal oxide wherein the metal includes In; an insulating film formed on the semiconductor film; and a pixel electrode formed on the insulating film and electrically connected to the thin film transistor, wherein the insulating film is formed from a material solution. - View Dependent Claims (2)
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3. An active matrix EL display device comprising:
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a thin film transistor formed over a substrate, the thin film transistor comprising; a gate electrode; a gate insulating film formed over the gate electrode; and a semiconductor film comprising a metal oxide wherein the metal includes In; an insulating film formed on the semiconductor film; a pixel electrode formed on the insulating film and electrically connected to the thin film transistor; wherein the insulating film is formed from a material solution. - View Dependent Claims (4)
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5. An active matrix liquid crystal display device comprising:
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a thin film transistor formed over a substrate, the thin film transistor comprising; a gate electrode; a gate insulating film formed over the gate electrode; and a semiconductor film comprising a metal oxide wherein the metal includes In; an insulating film having a planarized upper surface formed over the semiconductor film; and a pixel electrode formed over the insulating film and electrically connected to the thin film transistor. - View Dependent Claims (6, 7, 8)
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9. An active matrix EL display device comprising:
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a thin film transistor formed over a substrate, the thin film transistor comprising; a gate electrode; a gate insulating film formed over the gate electrode; and a semiconductor film comprising a metal oxide wherein the metal includes In; an insulating film having a planarized upper surface formed over the semiconductor film; and a pixel electrode formed over the insulating film and electrically connected to the thin film transistor. - View Dependent Claims (10, 11, 12)
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Specification